TIM8596-2

The TIM8596-2 is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 33.5 dBm at 8.5 GHz to 9.6 GHz;(2)high gain: G1db = 7.5 dB at 8.5 GHz to 9.6 GHz;(3)broad band internally matched;(4)hermetically sealed package.

The electrical characteristics of the TIM8596-2 can be summarized as:(1)transconductance: 600 ms;(2)pinch-off voltage: -2.0 to -5.0 V;(3)saturated drain current: 2.0 to 2.6 A;(4)gate-source breakdown voltage: -5 V;(5)thermal resistance: 5.0 to 6.0 /W.  The RF performance speifications of the TIM8596-2 can be concluded into some points:(1)output power at 1 dB compression point: 32.5 to 33.5 dBm;(2)power gain at 1 dB compression point: 6.5 to 7.5 dB;(3)drain current: 0.85 to 1.1 A;(4)power added efficiency: 24 %;(5)channel temperature rise: 60 .

And the absolute maximum ratings of this device can be summarized as:(1)drain-source voltage: 15 V;(2)gate-source voltage: -5 V;(3)drain current: 2.6 A;(4)total power dissipation: 15 W;(5)channel temperature: 175 ;(6)storage temperature: -65 to +175 . If you want to know more information about the TIM8596-2, please download the datasheet in www.seekic.com or www.chinaicmart.com .