TIP120

Transistors Bipolar (BJT) NPN Plastic Lds

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TIP120 Picture
SeekIC No. : 00206833 Detail

TIP120: Transistors Bipolar (BJT) NPN Plastic Lds

floor Price/Ceiling Price

US $ .35~.62 / Piece | Get Latest Price
Part Number:
TIP120
Mfg:
Rectron
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.62
  • $.53
  • $.44
  • $.35
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Bulk    

Description

Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Transistor Polarity : NPN
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Packaging : Bulk
Package / Case : TO-220


Pinout

  Connection Diagram




Description

The TIP120 is designed as the NPN silicon power darlington that has four points of features:(1)designed for complementary use with TIP125, TIP126 and TIP127;(2)65 W at 25 case temperature;(3)5 A continuous collector current;(4)Minimum hFE of 1000 at 3 V, 3 A.

The absolute maximum ratings of the TIP120 can be summarized as:(1)collector-base voltage: 100 V;(2)collector-emitter voltage: 100 V;(3)emitter-base voltage: 5 V;(4)continuous collector current: 5 A;(5)peak collector current: 8 A;(6)continuous base current: 0.1 A;(7)continuous device dissipation at (or below) 25 case temperature: 65 W;(8)continuous device dissipation at (or below) 25 free air temperature: 2 W;(9)unclamped inductive load energy: 50 mJ;(10)operating junction temperature range: -65 to +150 ;(11)storage temperature range: -65 to +150 ;(12)lead temperature 3.2 mm from case for 10 seconds: 260 .

The electrical characteristics of this device can be summarized as:(1)Collector-emitter breakdown voltage: 60 V;(2)Collector-emitter cut-off current: 50 uA;(3)Collector cut-off current: 50 uA;(4)Emitter cut-off current: 2 mA;(5)Forward current transfer ratio: 1000 ;(6)Collector-emitter saturation voltage: 2 or 4 V;(7)Base-emitter voltage: 2.5 V;(8)Parallel diode forward voltage: 3.5 V. If you want to know more information such as the electrical characteristics about the TIP120, please download the datasheet in www.seekic.com or www.chinaicmart.com.






Parameters:

Technical/Catalog InformationTIP120
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Darlington
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)5A
Power - Max65W
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 1A, 4V
Vce Saturation (Max) @ Ib, Ic2V @ 12mA, 3A
Frequency - Transition-
Current - Collector Cutoff (Max)500A
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TIP120
TIP120
497 2539 5 ND
49725395ND
497-2539-5



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