TIM5964-45SL

The TIM5964-45SL is designed as one kind of microwave power GaAs FET device that has five points of features:(1)high power: P1db = 46.5 dBm at 5.9 GHz to 6.4 GHz;(2)high gain: G1db = 9.0 dB at 5.9 GHz to 6.4 GHz;(3)broad band internally matched;(4)hermetically sealed package. The electrical characteristics of the TIM5964-45SL can be summarized as:(1)transconductance: 8000 ms;(2)pinch-off voltage: -1.0 to -4.0 V;(3)saturated drain current: 24.0 to 31 A;(4)gate-source breakdown voltage: -5 V;(5)thermal resistance: 0.8 to 1.2 /W.

The RF performance speifications of the TIM5964-45SL can be concluded into some points:(1)output power at 1 dB compression point: 46.0 to 46.5 dBm;(2)power gain at 1 dB compression point: 8.0 to 9.0 dB;(3)drain current: 9.6 to 10.8 A;(4)power added efficiency: 41 %;(5)channel temperature rise: 100 ;(6)3rd order intermodulation distortion: -42 to -45 dBc.  And the absolute maximum ratings of this device can be summarized as:(1)drain-source voltage: 15 V;(2)gate-source voltage: -5 V;(3)drain current: 31 A;(4)total power dissipation: 125 W;(5)channel temperature: 175 ;(6)storage temperature: -65 to +175 . If you want to know more information about the TIM5964-45SL, please download the datasheet in www.seekic.com or www.chinaicmart.com .