TIP122

Power Dissipation :
Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V
Maximum Collector Cut-off Current : 200 uA
Maximum Operating Temperature : + 150 C
Maximum DC Collector Current : 5 A
Package / Case : TO-220AB


Pinout






Specifications

Product	Product status	Eco Status	Pricing*	Package type	Leads	Packing method	Package Drawing	Package Marking Convention**
TIP122	Full Production	RoHS Compliant	$0.338	TO-220	3	BULK		Line 1: $Y (Fairchild logo) Line 2: &3 Line 3: TIP122
TIP122TU	Full Production	RoHS Compliant	$0.312	TO-220	3	RAIL		Line 1: $Y (Fairchild logo) Line 2: &3 Line 3: TIP122

* Fairchild 1,000 piece Budgetary Pricing

** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Package marking information for product TIP122 is available. Click here for more information .

Description

The TIP122 is one member of the TIP107 family which is designed as the PNP silicon power darlington that has four points of features:(1)designed for complementary use with TIP125, TIP126 and TIP127;(2)65 W at 25 case temperature;(3)5 A continuous collector current;(4)Minimum hFE of 1000 at 3 V, 3 A.

The absolute maximum ratings of the TIP122 can be summarized as:(1)collector-base voltage: -100 V;(2)collector-emitter voltage: -100 V;(3)emitter-base voltage: 5 V;(4)continuous collector current: 8 A;(5)peak collector current: 8 A;(6)continuous base current: 0.1 A;(7)continuous device dissipation at (or below) 25 case temperature: 65 W;(8)continuous device dissipation at (or below) 25 free air temperature: 2 W;(9)unclamped inductive load energy: 50 mJ;(10)operating junction temperature range: -65 to +150 ;(11)storage temperature range: -65 to +150 ;(12)lead temperature 3.2 mm from case for 10 seconds: 260 .

The electrical characteristics of this device can be summarized as:(1)Collector-emitter breakdown voltage: 100 V;(2)Collector-emitter cut-off current: 0.5 mA;(3)Collector cut-off current: 0.2 mA;(4)Emitter cut-off current: 2 mA;(5)Forward current transfer ratio: 1000;(6)Collector-emitter saturation voltage: 2 or 4 V;(7)Base-emitter voltage: 2.5 V;(8)Parallel diode forward voltage: 3.5 V. If you want to know more information such as the electrical characteristics about the TIP122, please download the datasheet in www.seekic.com or www.chinaicmart.com.

Parameters:

Technical/Catalog Information	TIP122
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	5A
Power - Max	65W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 500mA, 3V
Vce Saturation (Max) @ Ib, Ic	2V @ 12mA, 3A
Frequency - Transition	-
Current - Collector Cutoff (Max)	500A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	TIP122 TIP122 TIP122OS ND TIP122OSND TIP122OS