Features: · HIGH POWER P1dB=36.5dBm at 5.3GHz to 5.9GHz· BROAD BAND INTERNALLY MATCHED FET· HIGH GAIN G1dB=10.5dB at 5.3GHz to 5.9GHz· HERMETICALLY SEALED PACKAGESpecifications CHARACTERISTICS SYMBOL °C RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage ...
TIM5359-4UL: Features: · HIGH POWER P1dB=36.5dBm at 5.3GHz to 5.9GHz· BROAD BAND INTERNALLY MATCHED FET· HIGH GAIN G1dB=10.5dB at 5.3GHz to 5.9GHz· HERMETICALLY SEALED PACKAGESpecifications ...
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Features: ·LOW INTERMODULATION DISTORTION ·HIGH GAIN·BROAD BAND INTERNALLY MATCHED FET·...
Features: ·LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level·HIGH P...
Features: LOWINTERMODULATION DISTORTIONIM3=-45 dBc at Pout= 35.0dBmSingle Carrier LevelHIGH POWERP...
CHARACTERISTICS | SYMBOL | °C | RATING |
Drain-Source Voltage | VDS | V | 15 |
Gate-Source Voltage | VGS | V | -5 |
Drain Current | IDS | A | 3.5 |
Total Power Dissipation (Tc= 25 ) | PT | W | 25 |
Channel Temperature | Tch | 175 | |
Storage Temperature | Tstg | -65 to +175 |