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Mfg:IR Pack:TO-251 D/C:05+ Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET of the IRFU2905Z utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of ...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 75V 42A I-PAKSpecifically designed for Automotive applications of the IRFU2607ZPbF, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features...
Vendor:Other Category:Other
Specifically designed for Automotive applications of the IRFU2607Z, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of t...
Mfg:IR Pack:TO-251 D/C:04+ Vendor:Other Category:Other
Fourth Generation HEXFETs from International Rectifier IRFU2605 utilize advanced processing techniques that achieve extremely low on-resistance per silicon area and allow electrostatic discharge protection to be integrat...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 150V 24A I-PAK
Vendor:Other Category:Other
Mfg:IR Pack:TO-251 D/C:05+ Vendor:Other Category:Other
Seventh Generation HEXFET® Power MOSFETs IRFU2407 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swit...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 56A I-PAKSeventh Generation HEXFET® Power MOSFETs IRFU2405 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swit...
Mfg:FSC Pack:TO-251 D/C:04+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFU234B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology of IRFU234B has been especially tailored to minimize o...
Mfg:FSC Pack:TO-251 D/C:04+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFU230B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology IRFU230B has been especially tailored to minimize on-s...
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 75V 42A I-PAKSpecifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of the IRFU2307ZPbF ...
Mfg:IR Pack:TO-251 D/C:05+ Vendor:Other Category:Other
Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of the IRFU2307Z are ...
Mfg:FAIRCHILD Pack:TO-251 D/C:02+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFU224B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology IRFU224B has been especially tailored to minimize on-s...
Mfg:IR Vendor:Other Category:Other
Mfg:FSC Pack:TO-251 D/C:04+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFU220B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology IRFU220B has been especially tailored to minimize on-s...
Mfg:IR Pack:TO-251 D/C:05 Vendor:Other Category:Other
Mfg:FSC Pack:TO-251 D/C:04+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors of the IRFU214B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology of the IRFU214B has been especially tailored to...
Mfg:IR Pack:TO-251 D/C:04+ Vendor:Other Category:Other
Mfg:FSC Pack:TO-251 D/C:04+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFU210B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology IRFU210B has been especially tailored to minimize on-s...
Mfg:VISHAY D/C:07+ Vendor:Other Category:Other
Mfg:IR Pack:TO-251 D/C:05+ Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 200V 17A I-PAK
Vendor:Other Category:Other
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 200V 13A I-PAK
Mfg:IR Pack:TO-251 D/C:05+ Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 8.7A I-PAKSpecifically designed for Automotive applications, this HEXFET® Power MOSFET IRFU120ZPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of the I...
Mfg:IR Vendor:Other Category:Other
Fifth Generation HEXFETs IRFU120N from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed an...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 44A I-PAK The IRFU1205PbF is designed as HEXFET power MOSFET.It would provide the designers with an extremely efficient for use in a wide variety of applications. The IRFU1205PbF has five features.The first one is that ...
Mfg:IR Pack:TO-220 D/C:07+ Vendor:Other Category:Other
Mfg:FSC Pack:TO-251 D/C:04+ Vendor:Other Category:Other
D/C:08+ Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power field effect transistors IRFU110 designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These adva...
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 56A I-PAK
Vendor:Other Category:Other
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 42A I-PAKSpecifically designed for Automotive applications, this HEXFET® Power MOSFET IRFU1010ZPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this...
Vendor:Other Category:Other
Specifically designed for Automotive applications,this HEXFET® Power MOSFET IRFU1010Z utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des...
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 17A I-PAK The IRFR024NPbF and IRFU024NPbF has 7 features.The first one is ultra low on-resistance.The second one is suface mount (IRFR024N).The third one is straight lead (IRFU024N).The fourth one is advanced process technol...
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 17A I-PAK
Vendor:Other Category:Other
The IRFT001 is designed as HEXFET power modules intended for use in driving sub-fractional horsepower DC brushless motors. This three-phase bridge is offered in voltage of 60V, with current ratings up to 3.9A.The IRFT001...
Mfg:IR Pack:TO-262 D/C:5000 Vendor:Other Category:Other
Mfg:IR Pack:TO-262 D/C:08+ Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:IR Pack:TO-262 D/C:08+ Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:IR Pack:TO-262 D/C:5000 Vendor:Other Category:Other
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 73A TO-262
Mfg:IR Pack:TO-262 D/C:5000 Vendor:Other Category:Other
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 88A TO-262
Mfg:IR Pack:TO-262 D/C:5000 Vendor:Other Category:Other
Mfg:TO-262 Pack:7850 D/C:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 150V 83A TO-262
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 120A TO-262
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 140A TO-262
Mfg:IR Pack:TO-262 D/C:5000 Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 140A TO-262
Mfg:IR Pack:TO-262 D/C:08+ Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:IR Pack:TO-262 D/C:08+ Vendor:Other Category:Other
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 43A TO-262
Vendor:Other Category:Other
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 75V 80A TO-262
Mfg:IR Pack:TO-262 D/C:5000 Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:IR Pack:TO-262 D/C:5000 Vendor:Other Category:Other
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 200V 31A TO-262
Mfg:IR Pack:TO-262 D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 200V 31A TO-262
Vendor:Other Category:Other
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 200V 24A TO-262
Vendor:Other Category:Other
Mfg:IR Pack:TO-262 D/C:08+ Vendor:Other Category:Other
Mfg:IR Pack:TO-262 D/C:08+ Vendor:Other Category:Other
Vendor:Other Category:Other
The IRFSL11N50APbF is designed as power MOSFET.It provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The IRFSL11N50APbF has si...
Mfg:IR Pack:TO-262 D/C:04+ Vendor:Other Category:Other
Third Generation HEXFET® Power MOSFETs of the IRFSL11N50A from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiven...
Mfg:IR Vendor:Other Category:Other
Vendor:Other Category:Other
Power MOSFET IRFS9N60A, SiHFS9N60A
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Mfg:FAI Pack:TO220-3 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors of IRFS840B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology of IRFS840B has been especially tailored to minimiz...
Mfg:IR Pack:06+ Vendor:Other Category:Other
Mfg:FSC Pack:TO-220 D/C:04+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFS830B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology IRFS830B has been especially tailored to minimize on-s...
Mfg:IR Pack:06+ Vendor:Other Category:Other
Mfg:FAIRCHILD Pack:TO-220 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors of IRFS820B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology IRFS820B has been especially tailored to minimize o...
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Fairchild Semiconductor Category:Discrete Semiconductor Products
MOSFET N-CHAN 400V 8.4A TO-220F
Mfg:FSC Pack:TO-220 D/C:04+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFS740B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology IRFS740B has been especially tailored to minimize on-s...
Mfg:FAI Pack:TO220-3 D/C:93+ Vendor:Other Category:Other
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology IRFS730B has been especially tailored tominimize on-state resis...
Mfg:FSC Pack:03+ D/C:To-220F Vendor:Other Category:Other
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors of the IRFS720B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology of the IRFS720B has been especially tailored to...
Mfg:FAIRCHILD Pack:TO-220 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors of the IRFS710B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology of the IRFS710B has been especially tailored to...
Mfg:FAIRCHILD Pack:TO-220 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors of the IRFS654B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology of the IRFS654B has been especially tailored to...
Mfg:IR Pack:06+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors of the IRFS650B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology of the IRFS650B has been especially tailored to...
Mfg:IR Pack:06+ Vendor:Other Category:Other
Pack:TO-220 D/C:09+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors of the IRFS644B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology of the IRFS644B has been especially tailored to...
Mfg:FSC Pack:TO-220 D/C:04+ Vendor:Other Category:Other
Mfg:Fairchild Pack:TO-220F D/C:06+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology IRFS640B has been especially tailored to minimize on-state resi...
Vendor:Other Category:Other
The IRFS640 is designed as one kind of N-channel power MOSFETS with some features such as:(1)lower RDS(on);(2)improved inductive ruggedness;(3)fast switching times;(4)rugged polysilicon gate cell structure;(5)lower input...
Mfg:FAIRCHILD Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFS634B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology IRFS634B has been especially tailored to minimize on-s...
Vendor:Other Category:Other
The IRFS634A has the following features including avalanche rugged technology;rugged gate oxide technology;lower input capacitance;improved gate charge;extended safe operating area;lower leakage current;lower RDS(O...
Mfg:Fairchild Pack:TO-220F D/C:06+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFS630B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology of IRFS630B has been especially tailored to minimize o...
Mfg:FAIRCHILD Pack:TO-220F D/C:09+ Vendor:Other Category:Other
© 2008-2012 SeekIC.com Corp.All Rights Reserved.