IRFU2307ZPBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : 20 V
Package / Case : IPAK
Continuous Drain Current : 53 A


Features:

 Advanced Process Technology
Ultra Low On-Resistance
175 Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V (Silicon Limited)	53	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	38
ID @ TC = 25	Continuous Drain Current, VGS @ 10V (Package Limited)	42
IDM	Pulsed Drain Current	210
PD @TC= 25	Power Dissipation	110	W
	Linear Derating Factor	0.70	W/
VGS	Gate-to-Source Voltage	± 20	V
EAS (Thermally limited)	Single Pulse Avalanche Energy	100	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	140
IAR	Avalanche Current􀀀	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting Torque, 6-32 or M3 screw	10 lbfin (1.1Nm)

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of the IRFU2307ZPbF are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRFU2307ZPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25° C	42A
Rds On (Max) @ Id, Vgs	16 mOhm @ 32A, 10V
Input Capacitance (Ciss) @ Vds	2190pF @ 25V
Power - Max	110W
Packaging	Tube
Gate Charge (Qg) @ Vgs	75nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFU2307ZPBF IRFU2307ZPBF