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IRFU010

MOSFET N-CH 50V 8.2A I-PAK

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SeekIC No. : 003432013 Detail

IRFU010: MOSFET N-CH 50V 8.2A I-PAK

IRFU010 Data Sheet

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Part Number:
IRFU010
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Series: - Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 50V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 8.2A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 10nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 250pF @ 25V
Power - Max: 25W Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TO-251AA    

Description

Series: -
Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Gate Charge (Qg) @ Vgs: 10nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Input Capacitance (Ciss) @ Vds: 250pF @ 25V
Drain to Source Voltage (Vdss): 50V
Power - Max: 25W
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 8.2A
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V


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