IRFU010 Selling Leads, Price trend, IRFU010 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003432013 Detail

IRFU010: MOSFET N-CH 50V 8.2A I-PAK

IRFU010 Data Sheet

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Part Number:: IRFU010
Mfg:
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/11/21

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Recent History
What is this?

IRFU010PBF evaluate
MOSFET N-Chan 60V 7.7 Amp
IRFU014 evaluate
US $.75 - .81 / Piece

MOSFET N-Chan 60V 7.7 Amp
IRFU014PBF evaluate
US $.44 - .71 / Piece

MOSFET N-Chan 60V 7.7 Amp

Product Details

Quick Details

Series:	-	Manufacturer:	Vishay Siliconix
FET Type:	MOSFET N-Channel, Metal Oxide	Transistor Type:	-
Gain :	19.5 dB	Current - Collector (Ic) (Max):	-
FET Feature:	Standard	Drain to Source Voltage (Vdss):	50V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	8.2A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	200 mOhm @ 4.2A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	4V @ 250µA	Gate Charge (Qg) @ Vgs:	10nC @ 10V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	250pF @ 25V
Power - Max:	25W	Mounting Type:	Through Hole
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA	Supplier Device Package:	TO-251AA

Description

Series: -
Manufacturer: Vishay Siliconix
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Gate Charge (Qg) @ Vgs: 10nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Input Capacitance (Ciss) @ Vds: 250pF @ 25V
Drain to Source Voltage (Vdss): 50V
Power - Max: 25W
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 8.2A
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V

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IRFU010

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