Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology`Lower Input Capacitance`Improved Gate Charge`Extended Safe Operating Area`Lower Leakage Current : 10 A (Max.) @ VDS = 100V`Lower RDS(ON) : 0.289 (Typ.)Specifications Parameter Max. Units VDS Drain-Source Vol...
IRFU110A: Features: `Avalanche Rugged Technology`Rugged Gate Oxide Technology`Lower Input Capacitance`Improved Gate Charge`Extended Safe Operating Area`Lower Leakage Current : 10 A (Max.) @ VDS = 100V`Lower R...
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Parameter |
Max. |
Units | |
VDS |
Drain-Source Voltage |
100 |
V |
VGS |
Gate-to-Source Voltage |
4.7 |
A |
ID @ Tc = 25 | Continuous Drain Current, VGS |
3 | |
ID @ Tc = 100 | Continuous Drain Current, VGS |
19 | |
IDM |
Pulsed Drain Current |
±0 | |
PD @Tc= 25 |
C Max. Power Dissipation |
59 |
W |
ID @ Tc = 100 |
Continuous Drain Current, VGS |
47 |
|
Linear Derating Factor |
0.59 |
W | |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
||
TJ |
Operating Junction and Storage Temperature Range |
-55 to + 175 |