Position: Home  > All Categories> Integrated Circuits (ICs) > IRFU234B

IRFU234B

Features: • 6.6A, 250V, RDS(on) = 0.45 @VGS = 10 V• Low gate charge ( typical 29 nC)• Low Crss ( typical 20 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter Value Units VDSS Drain-Source...

product image

IRFU234B Picture
See larger image
SeekIC No. : 004377483 Detail

IRFU234B: Features: • 6.6A, 250V, RDS(on) = 0.45 @VGS = 10 V• Low gate charge ( typical 29 nC)• Low Crss ( typical 20 pF)• Fast switching• 100% avalanche tested• Improved d...

IRFU234B Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRFU234B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 6.6A, 250V, RDS(on) = 0.45 @VGS = 10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol
Parameter
Value
Units
VDSS
 Drain-Source Voltage
250
V
ID
 Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
6.6
A
4.2
A
IDM
 Drain Current - Pulsed
26.4
A
VGSS
 Gate-Source Voltage
±30
V
EAS
 Single Pulsed Avalanche Energy
200
mJ
IAR
 Avalanche Current
6.6
A
EAR
 Repetitive Avalanche Energy
4.9
mJ
dv/dt
 Peak Diode Recovery dv/dt
5.5
V/ns
PD
 Power Dissipation (TA = 25°C)
2.5
W
Power Dissipation (TC = 25°C)
- Derate above 25°C
49
W
0.39
W/°C
TJ,Tstg
 Operating and Storage Temperature Range
-55 to +150
°C
TL
 Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power field effect transistors IRFU234B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology of IRFU234B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Tapes, Adhesives
803
AC452-2
Prototyping Products
AVT4168
DE1
Resistors
A101G
3006P-1-205LF
RF and RFID
X3C26P1-30S
1P620S
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Memory Cards, Modules
WT32
VTL5C7
View more