MOSFET N-CH 55V 56A I-PAK
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Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 56 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 40 | |
IDM | Pulsed Drain Current | 220 | |
PD @TC = 25°C | Power Dissipation | 110 | W |
Linear Derating Factor | 0.71 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 130 | mJ |
IAR | Avalanche Current | 34 | A |
EAR | Repetitive Avalanche Energy | 11 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case) |
Seventh Generation HEXFET® Power MOSFETs IRFU2405 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak of IRFU2405 is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Technical/Catalog Information | IRFU2405 |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 56A |
Rds On (Max) @ Id, Vgs | 16 mOhm @ 34A, 10V |
Input Capacitance (Ciss) @ Vds | 2430pF @ 25V |
Power - Max | 110W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 110nC @ 10V |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
FET Feature | Standard |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRFU2405 IRFU2405 |