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Index I : IRFW820B,IRFW740B,IRFU310B,
IRFW820B
Mfg:FAIRCHILD Pack:TO-263 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW820B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW740B
Mfg:FAIRCHILD Pack:TO-263 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW740B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW740A
Mfg:FAIRCHILD Pack:TO-263 D/C:05+ Vendor:Other Category:Other
IRFW730B
Mfg:FAIRCHILD Pack:TO-263 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW730B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resi...IRFW720B
Mfg:FAIRCHILD Pack:TO-263 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW720B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW710B
Mfg:FAIRCHILD Pack:TO-263 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW710B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW654B
Mfg:FAIRCHILD Pack:TO Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW654B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW650B
Mfg:FSC Pack:TO-263 D/C:04+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW650B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW644B
Mfg:FAIRCHILD Pack:TO-263 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW644B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW640B
Mfg:FSC Pack:TO-263 D/C:04+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW640B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW634B
Mfg:FAIRCHILD Pack:TO-263 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW634B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW630B
Mfg:PHL D/C:08+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW630B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW624B
Mfg:FAIRCHILD Pack:TO-263 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW624B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW620B
Mfg:FAIRCHILD Pack:TO-263 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW620B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW614B
Mfg:FAIRCHILD Pack:TO-263 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW614B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW610B
Mfg:FAIRCHILD Pack:TO-263 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW610B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW/IZ44A
Vendor:Other Category:Other
IRFW/I840A
Vendor:Other Category:Other
IRFW/I820A
Vendor:Other Category:Other
IRFW/I550A
Vendor:Other Category:Other
IRFW/I540A
Vendor:Other Category:Other
IRFW/I530A
Vendor:Other Category:Other
IRFW/I520A
Vendor:Other Category:Other
IRFW/I510A
Vendor:Other Category:Other
IRFW
Vendor:Other Category:Other
IRFV460
Vendor:Other Category:Other
The IRFV460 has seven features.The first one is repetitive avalanche rating.The second one is isolated and hermetically sealed.The third one is alternative to TO-3 package.The fourth one is simple drive requirements.The ...IRFV260
Mfg:IR Pack:TO-258AA D/C:05+ Vendor:Other Category:Other
IRFV064
Vendor:Other Category:Other
The IRFV064 has six features.The first one is avalanche energy rating.The second one is isolated and hermetically sealed.The third one is alternative to TO-3 package.The fourth one is simple drive requirements.The fifth ...IRFU9N20D
Mfg:IR D/C:04+ Vendor:Other Category:Other
IRFU9220
Mfg:IR Pack:TO-251 D/C:04+ Vendor:Other Category:Other
IRFU9214
Mfg:IR Pack:TO-251 D/C:04+ Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier IRFU9214 utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized dev...IRFU9120N
Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier IRFU9120N utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...IRFU9120
Mfg:IR Pack:TO-251 D/C:09+ Vendor:Other Category:Other
These advanced power MOSFETs IRFU9120 are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. The IRFU9120 is P-Channel enhancement mode silicon gate pow...IRFU9110
Mfg:IR Pack:TO-251 D/C:0510+ Vendor:Other Category:Other
IRFU9024N
Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier IRFU9024N utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug...IRFU6215PbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 150V 13A I-PAKFifth Generation HEXFETs from International Rectifier IRFU6215PbF utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching spe...IRFU6215
Mfg:IR Pack:TO-251 D/C:04+ Vendor:Other Category:Other
IRFU5505G
Vendor:Other Category:Other
IRFU5505
Mfg:IR Pack:TO-251 D/C:0413+ Vendor:Other Category:Other
IRFU5410
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
IRFU540Z
Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFU540Z utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of the IRFU...IRFU5305PbF
Mfg:500 Pack:IR D/C:05+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET P-CH 55V 31A I-PAKFifth Generation HEXFETs from International Rectifier IRFU5305PbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit of IRFU5305PbF , combined with the fast swit...IRFU5305
Mfg:IR Pack:TO-251 D/C:04+ Vendor:Other Category:Other
IRFU48Z
Mfg:IR Pack:TO-251 D/C:05+ Vendor:Other Category:Other
Specifically designed for Automotive applications,this HEXFET® Power MOSFET IRFU48Z utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this desi...IRFU430B
Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFU430B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state res...IRFU430A
Mfg:IR D/C:439 Vendor:Other Category:Other
IRFU420PbF
Vendor:Other Category:Other
The IRFU420PbF is designed as power MOSFET.The IRFU420PbF provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The IRFU420PbF h...IRFU420B
Mfg:FSC Pack:TO-251 D/C:04+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFU420B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state res...IRFU420A
D/C:03+ Vendor:Other Category:Other
IRFU420
Mfg:IR D/C:04+05+ Vendor:Other Category:Other
IRFU410B
Mfg:IR Pack:TO-251 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFU410B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFU410A
Vendor:Other Category:Other
IRFU4105ZPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 30A I-PAK Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFU4105ZPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of t...IRFU4105Z
Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFU4105Z utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this de...IRFU4105PbF
Mfg:IR Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier IRFU4105PbF utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit of IRFU4105PbF, combined with the fast...IRFU4105
Mfg:IR Pack:TO-251 D/C:04+ Vendor:Other Category:Other
IRFU4104PbF
Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFU4104PbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of the I...IRFU4104
Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFU4104 utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of the IRF...IRFU410
Mfg:INTERSIL Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
The IRFU410 are N-Channel enhancement mode silicon gate power field effect transistors IRFU410. The IRFU410 is advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the break...IRFU3911
Mfg:IR Pack:TO-251 D/C:05+ Vendor:Other Category:Other
IRFU3806PbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 43A I-PAKIRFU3711ZPbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 20V 93A I-PAKIRFU3711ZCPbF
Vendor:Other Category:Other
IRFU3711
Vendor:Other Category:Other
IRFU3710ZPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 42A I-PAKSpecifically designed for Automotive applications, this HEXFET® Power MOSFET IRFU3710ZPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this...IRFU3710Z
Mfg:IR Pack:TO-251 D/C:05+ Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFU3710Z utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this d...IRFU3709ZPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 30V 86A I-PAKIRFU3709ZCPbF
Vendor:Other Category:Other
IRFU3709Z
Mfg:IR Pack:TO-251AA D/C:05+ Vendor:Other Category:Other
IRFU3709PbF
Vendor:Other Category:Other
IRFU3709
Vendor:Other Category:Other
IRFU3708
Vendor:Other Category:Other
IRFU3707ZPbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 30V 56A I-PAKIRFU3707ZCPbF
Vendor:Other Category:Other
IRFU3707Z
Mfg:IR Pack:TO-251 D/C:05+ Vendor:Other Category:Other
IRFU3707
Mfg:IR Pack:TO-251 D/C:05+ Vendor:Other Category:Other
IRFU3706CPbF
Vendor:Other Category:Other
IRFU3706
Vendor:Other Category:Other
IRFU3704ZPbF
Vendor:Other Category:Other
IRFU3704Z
Mfg:IR Pack:TO-251 D/C:05+ Vendor:Other Category:Other
IRFU3704
Vendor:Other Category:Other
IRFU3607PbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 75V 56A I-PAKIRFU3518
Mfg:IR Pack:TO-251 D/C:05+ Vendor:Other Category:Other
IRFU3505
Mfg:IR Pack:TO-251 D/C:05+ Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET IRFU3505 utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this pro...IRFU3504ZPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 40V 42A I-PAKSpecifically designed for Automotive applications, this HEXFET® Power MOSFET IRFU3504ZPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of the ...IRFU3504Z
Mfg:IR Pack:TO-251 D/C:05+ Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET of IRFU3504Z utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of the ...IRFU3504PbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 40V 30A I-PAK Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET of IRFU3504PbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Addi tional features of ...IRFU3504
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Specifically designed for Automotive applications, this HEXFET® Power MOSFET of IRFU3504 utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this ...IRFU3418PbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 80V 70A I-PAKIRFU3418
Mfg:IR Pack:TO-251 D/C:05+ Vendor:Other Category:Other
IRFU3412
Mfg:IR Pack:TO-251 D/C:05+ Vendor:Other Category:Other
IRFU3411PbF
Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and rugg...IRFU3411
Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs of IRFU3411 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching sp...IRFU3410PbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 31A I-PAKIRFU3410
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 100V 31A I-PAKIRFU330B
Mfg:FSC Pack:TO-251 D/C:04+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFU330B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology of IRFU330B has been especially tailored to minimize on...IRFU3303
Mfg:IR Pack:TO-251 D/C:04+ Vendor:Other Category:Other
Fifth Generation HEXFETs of IRFU3303 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and r...IRFU320B
Mfg:FSC Pack:TO-251 D/C:04+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFU320B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology of IRFU320B has been especially tailored to minimize o...IRFU320
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
These are N-Channel enhancement mode silicon gate power field effect transistors. The IRFU320 is advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche...IRFU310B
Mfg:IR Pack:TO-251 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFU310B are produced using Fairchild's proprietary, planar, DMOS technology.This advanced technology IRFU310B has been especially tailored to minimize on-s...