IRFU3710Z

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 100nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Manufacturer: International Rectifier
Current - Continuous Drain (Id) @ 25° C: 42A
Power - Max: 140W
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak
Rds On (Max) @ Id, Vgs: 18 mOhm @ 33A, 10V
Input Capacitance (Ciss) @ Vds: 2930pF @ 25V


Features:

• Advanced Process Technology
• Ultra Low On-Resistance
• 175°C Operating Temperature
• Fast Switching
• Repetitive Avalanche Allowed up to Tjmax


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V (Silicon Limited)	56	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	39
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V (Package Limited)	42
IDM	Pulsed Drain Current	220
PD @TC = 25°C	Power Dissipation	140	W
	Linear Derating Factor	0.95	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS (Thermally limited)	Single Pulse Avalanche Energy	150	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	200
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting torque, 6-32 or M3 screw.	10 lbf`in (1.1N`m)

Description

Specifically designed for Automotive applications, this HEXFET^® Power MOSFET  IRFU3710Z utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature,fast switching speed and improved repetitive avalanche rating . The IRFU3710Z features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.