Position: Home  > All Categories> Integrated Circuits (ICs) > IRFU410A

IRFU410A

Features: ·Improved Inductive Ruggedness·Rugged Polysilicon Gate Cell Structure·Fast Switching Times·Lower Input Capacitance·Improved Gate Charge·Extended Safe Operating Area·Improved High Temperature ReliabilitySpecifications Symbol Characteristic Value Units VDSS Drain-to-Source Volt...

product image

IRFU410A Picture
See larger image
SeekIC No. : 004377512 Detail

IRFU410A: Features: ·Improved Inductive Ruggedness·Rugged Polysilicon Gate Cell Structure·Fast Switching Times·Lower Input Capacitance·Improved Gate Charge·Extended Safe Operating Area·Improved High Temperatu...

IRFU410A Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRFU410A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Improved Inductive Ruggedness
·Rugged Polysilicon Gate Cell Structure
·Fast Switching Times
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Improved High Temperature Reliability


Specifications

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 520 V
ID Continuous Drain Current (TC=25)
 1.2 A
Continuous Drain Current (TC=100)
 0.8
IDM Drain Current-Pulsed                            
4.0 A
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulsed Avalanche Energy           
40 mJ
IAR Avalanche Current                                
1.2 A
EAR Repetitive Avalanche Energy                
4.2 mJ
dv/dt Peak Diode Recovery dv/dt                   
 3.5 V/ns
PD Total Power Dissipation (TC=25 )
Linear Derating Factor
 42
0.33		 W
W/
TJ , TSTG Operating Junction and
Storage Temperature Range		 -55 to +150
TL Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds		 300

Notes;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=40mH, Vdd=25V, RG=25 , Starting TJ=25
dv/dt Test Condition



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Audio Products
HUC1002
WM-64CT
Kits
IT243
UVSC-110-4E1
Circuit Protection
A50QS75-4Y
F-17*77
Cables, Wires
821-0814-a
415-0100-150
Optical Inspection Equipment
AA924
A21K4B
View more