Features: • 3.3A, 400V, RDS(on) = 1.75Ω @VGS = 10 V• Low gate charge ( typical 14 nC)• Low Crss ( typical 11 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRFW720B / IRFI720B Unit VDSS ...
IRFW720B: Features: • 3.3A, 400V, RDS(on) = 1.75Ω @VGS = 10 V• Low gate charge ( typical 14 nC)• Low Crss ( typical 11 pF)• Fast switching• 100% avalanche tested• Imp...
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Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved G...
Features: Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improv...
Symbol | Parameter | IRFW720B / IRFI720B | Unit | |
VDSS |
Drain-Source Voltage |
400 | V | |
ID |
Drain Current - Continuous (TC = 25°C) |
3.3 |
A | |
2.1 |
A | |||
IDM |
Drain Current - Pulsed (Note 1) |
13.2 | A | |
VGSS | Gate-Source Voltage | ± 30 | V | |
EAS |
Single Pulsed Avalanche Energy (Note 2) | 240 | mJ | |
IAR |
Avalanche Current (Note 1) |
3.3 |
A | |
EAR |
Repetitive Avalanche Energy (Note 1) |
4.9 |
mJ | |
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns | |
PD |
Power Dissipation (TA = 25°C) * |
|
W | |
Power Dissipation (TC = 25°C) |
49 |
W | ||
0.39 |
W/ | |||
TJ, Tstg |
Operating and Storage Temperature Range |
-55 to +150 |
||
TL |
Maximum lead temperature for soldering purposes, |
300 |
These N-Channel enhancement mode power field effect transistors IRFW720B are produced using Fairchild's proprietary,planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices IRFW720B are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.