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IRFW/I510A

Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating Area175 Operating TemperatureLower Leakage Current : 10 A (Max.) @ VDS = 100VLower RDS(ON) : 0.289 (Typ.)Specifications Symbol Characteristic Value Units V...

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SeekIC No. : 004377523 Detail

IRFW/I510A: Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating Area175 Operating TemperatureLower Leakage Current : 10 A (Max.) @...

IRFW/I510A Data Sheet

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Part Number:
IRFW/I510A
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175 Operating Temperature
Lower Leakage Current : 10 A (Max.) @ VDS = 100V
Lower RDS(ON) : 0.289 (Typ.)


Specifications

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 100 V
ID Continuous Drain Current (TC=25 ) 5.6 A
Continuous Drain Current (TC=100 ) 4
IDM Drain Current-PulsedO 20 A
VGS Gate-to-Source Voltage +_ 20 V
EAS Single Pulsed Avalanche EnergyO 63 mJ
IAR Avalanche CurrentO 5.6 A
EAR Repetitive Avalanche EnergyO 3.3 mJ
dv/dt Peak Diode Recovery dv/dtO 6.5 V/ns
PD Total Power Dissipation (TA=25 ) 3.8 W
Total Power Dissipation (TC=25 )
Linear Derating Factor		 33
0.22		 W
TJ , TSTG Operating Junction and
Storage Temperature Range		 - 55 to +175 OC
TL Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds		 300



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