Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating Area175 Operating TemperatureLower Leakage Current : 10 A (Max.) @ VDS = 100VLower RDS(ON) : 0.155 (Typ.)Specifications Symbol Characteristic Value Units V...
IRFW: Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating Area175 Operating TemperatureLower Leakage Current : 10 A (Max.) @...
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Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved G...
Features: Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improv...
Features: Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improv...
Symbol | Characteristic | Value | Units |
VDSS | Drain-to-Source Voltage | 100 | V |
ID | Continuous Drain Current (TC=25 ) | 9.2 | A |
Continuous Drain Current (TC=100 ) | 6.5 | ||
IDM | Drain Current-Pulsed | 37 | A |
VGS | Gate-to-Source Voltage | ±.0 | V |
EAS | Single Pulsed Avalanche Energy | 113 | mJ |
IAR | Avalanche Current | 9.2 | A |
EAR | Repetitive Avalanche Energy | 4.5 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 6.5 | V/ns |
PD | Total Power Dissipation (TA=25 ) | 45 0.3 |
W |
Total Power Dissipation (TC=25 ) Linear Derating Factor | |||
TJ , TSTG | Operating Junction and Storage Temperature Range |
- 55 to +175 | |
TL | Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |