Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Mounting Style
: Through Hole
Drain-Source Breakdown Voltage
: 40 V
Packaging
: Tube
Gate-Source Breakdown Voltage
: 20 V
Continuous Drain Current
: 87 A
Package / Case
: IPAK
Features: Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Specifications
| |
Parameter |
Max. |
Units |
ID@ TC = 25°C
|
Continuous Drain Current, VGS @ 10V (Silicon limited) |
87 |
A |
| ID@ TC = 100°C |
Continuous Drain Current, VGS@ 10V (See Fig.9) |
61 |
| ID@ TC = 25°C |
Continuous Drain Current, VGS@ 10V (Package limited) |
30 |
| IDM |
Pulsed Drain Current |
350 |
| PD @TC = 25°C |
Power Dissipation |
140 |
W |
| |
Linear Derating Factor |
0.92 |
W/°C |
| VGS |
Gate-to-Source Voltage |
± 20 |
V |
| EAS |
Single Pulse Avalanche Energy |
240 |
mJ |
EAS(tested)
|
Single Pulse Avalanche Energy Tested Value |
480 |
| IAR |
Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
EAR
|
Repetitive Avalanche Energy |
mJ |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 175 |
°C |
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET of IRFU3504PbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Addi tional features of this product are a 175°C junction operatin temperature, fast switching speed and improved repetitiv avalanche rating. These features of IRFU3504PbF combine to make this desig an extremely efficient and reliable device for use in Automotiv applications and a wide variety of other applications.
The D-Pak of IRFU3504PbF is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Parameters: | Technical/Catalog Information | IRFU3504PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 30A |
| Rds On (Max) @ Id, Vgs | 9.2 mOhm @ 30A, 10V |
| Input Capacitance (Ciss) @ Vds | 2150pF @ 25V |
| Power - Max | 140W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 71nC @ 10V |
| Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFU3504PBF
IRFU3504PBF
|
IRFU3504PBF Data Sheet
