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Mfg:IR Pack:TO-247 D/C:05+06+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT STD 600V 34A TO-247AC
Mfg:IR D/C:4 Vendor:Other Category:Other
Mfg:IR Pack:TO-247 D/C:05+06+ Vendor:Other Category:Other
Mfg:IR Pack:TO-247 D/C:05+06+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 600V 31A TO-247AC
Mfg:IR Pack:TO-247 D/C:05+06+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT FAST 600V 31A TO-247AC
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT STD 250V 98A TO-247AC
Mfg:IR Pack:TO-247AC D/C:05+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT STD 250V 98A TO-247AC
Mfg:N/A Pack:NA/ D/C:09+ Vendor:Other Category:Other
Mfg:IR Pack:TO-254AA D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:TO-254AA D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:TO-254AA D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:TO Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT WARP 600V 17A TO220FP
Mfg:52852 Pack: I R Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT WARP 600V 17A TO-220FP
Mfg:TO-220FullPak Pack:7850 D/C:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 600V 17A TO-220FP
Mfg:IR Pack:N/A D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT STD 600V 23.5A TO220FP
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT STD 600V 23.5A TO-220FP
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 600V 17A TO-220FP
Mfg:TO-220FullPak Pack:7850 D/C:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 600V 20.3A TO-220FP
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT WARP 600V 11.8A TO220FP
Mfg:IR Pack:TO-220 D/C:05+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT WARP 600V 11.8A TO-220FP
Mfg:IR Pack:N/A D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 600V 11.4A TO220FP
Mfg:52852 Pack: I R Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 600V 11.4A TO-220FP
Mfg:IR Pack:2008+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 600V 11.5A TO220FP
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 600V 11.5A TO-220FP
Mfg:IR Pack:TO Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 600V 14.3A TO220FP
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 600V 14.3A TO-220FP
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 600V 6.8A TO220FP The LPL-18 series EMIF10-LCD01F1 has the following features including ultrafast:optimized for high perating up to 80KHz in hard switching>200KHz in resonant mode;generation 4 IGBT design provides tighter paramet...
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 600V 6.8A TO-220FP
Vendor:Other Category:Other
The IRG4CF50WB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 3.11V Max. Max.,the test conditions is IC=1...
Vendor:Other Category:Other
The IRG4CC81UB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.5V Max. Max.,the test conditions is IC=10...
Vendor:Other Category:Other
The IRG4CC77KB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.5V Max. Max.,the test conditions is IC=10...
Vendor:Other Category:Other
The IRG4CC72KB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.5V Max. Max.,the test conditions is IC=10...
Vendor:Other Category:Other
The IRG4CC71KB IGBT is a die in wafer form. for customers requiring product supplied as known good die(KGD) or requiring specific die level testing, please contact your local IR sales. Three shipping options are offered ...
Vendor:Other Category:Other
The IRG4CC70UB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.5V Max. Max.,the test conditions is IC=10...
Vendor:Other Category:Other
The IRG4CC60UB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 0.8V Min.,1.9V Max. Max.,the test condition...
Vendor:Other Category:Other
The IRG4CC60FB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 0.8V Min.,1.3V Max. Max.,the test condition...
Vendor:Other Category:Other
The IRG4CC58KB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.5V Max.,the test conditions is IC=10A,TJ=...
Vendor:Other Category:Other
The IRG4CC50WB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 2.3V Max.,the test conditions is IC=10A,TJ=...
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT DIEThe IRG4CC50UB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.5V Max.,the test conditions is IC=10A,TJ=...
Vendor:Other Category:Other
The IRG4CC50SB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.5V Max.,the test conditions is IC=10A,TJ=...
Vendor:Other Category:Other
The IRG4CC50KB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.5V Max.,the test conditions is IC=10A,TJ=...
Vendor:Other Category:Other
The IRG4CC50FB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.5V Max.,the test conditions is IC=10A,TJ=...
Vendor:Other Category:Other
The IRG4CC40WB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 2.7V Max.,the test conditions is IC=10A,TJ=...
Vendor:Other Category:Other
The IRG4CC40UB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.5V Max.,the test conditions is IC=10A,TJ=...
Vendor:Other Category:Other
The IRG4CC40SB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.5V Max.,the test conditions is IC=10A,TJ=...
Vendor:Other Category:Other
The IRG4CC40RB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 1.4V Max.,the test conditions is IC=10A,TJ=...
Vendor:Other Category:Other
The IRG4CC40KB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.5V Max.,the test conditions is IC=10A,TJ=...
Vendor:Other Category:Other
The IRG4CC40FB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.5V Max.,the test conditions is IC=10A,TJ=...
Vendor:Other Category:Other
The IRG4CC30UB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.5V Max.,the test conditions is IC=10A,TJ=...
Vendor:Other Category:Other
The IRG4CC30SB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.5V Max.,the test conditions is IC=10A,TJ=...
Vendor:Other Category:Other
The IRG4CC30KB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.5V Max.,the test conditions is IC=10A,TJ=...
Vendor:Other Category:Other
The IRG4CC30FB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.5V Max.,the test conditions is IC=10A,TJ=...
Vendor:Other Category:Other
The IRG4CC20UB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.5V Max.,the test conditions is IC=10A,TJ=...
Vendor:Other Category:Other
The IRG4CC20RB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 1.4V Max.,the test conditions is IC=3.25A,T...
Vendor:Other Category:Other
The IRG4CC20MB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 1.6V Max.,the test conditions is IC=3.25A,T...
Vendor:Other Category:Other
The IRG4CC20KB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.5V Max.,the test conditions is IC=1.5A,TJ...
Vendor:Other Category:Other
The IRG4CC20FB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.5V Max.,the test conditions is IC=1.5A...
Vendor:Other Category:Other
The IRG4CC10UB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.5V Max.,the test conditions is IC=1.5A,TJ...
Vendor:Other Category:Other
The IRG4CC10SB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.5V Max.,the test conditions is IC=1.5A,TJ...
Vendor:Other Category:Other
The IRG4CC10KB has some electrical characteristics (wafer form).When parameter is VCE(on),the description is collector-to-emitter saturation voltage,the guaranteed (Min/Max) is 4.5V Max.,the test conditions is IC=1.5A,TJ...
Mfg:IR D/C:06+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 1200V 11A D2PAK
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 1200V 11A D2PAK
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 1200V 11A TO262 The IRG4BH20K-LPbF has 5 features.The first one is high short circuit rating optimized for motor control,tsc = 10s,@360V VCE(start),TJ = 125,VGE = 15V. The second one is combines low conduction losses with high swi...
Mfg:IR Pack:TO-262 D/C:04+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 1200V 11A TO-262
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT WARP 600V 40A TO220AB IRG4BC40WPbF is a kind of insulated gate bipolar transistor.Here you can get some information about the features of IRG4BC40WPbF.First,it is designed expressly for switch-mode power supply and PFC (power factor cor...
Vendor:Other Category:Other
Mfg:IR Pack:TO-220 D/C:05+ Vendor:Other Category:Other
Mfg:IR Pack:TO-220 D/C:05+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 600V 40A TO-220AB
Mfg:IR D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT STD 600V 60A TO-220AB
Mfg:module Pack:IR D/C:05+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT STD 600V 60A TO-220AB
Mfg:IR Pack:07+ D/C:TO-220 Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 600V 42A TO220AB
Mfg:IR Pack:04+ D/C:220 Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 600V 42A TO-220AB
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT FAST 600V 49A TO220AB Features of IRG4BC40FPbF are these four points:(1)fast:optimized for medium operating frequencies(1-5KHz in hard switching,>20 KHz in resonant mode);(2)generation 4 IGBT design provides tighter parameter distrib...
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT FAST 600V 49A TO-220AB
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT WARP 600V 23A D2PAK IRG4BC30W-SPbF is a kind of insulated gate bipolar transistor.There are five features of IRG4BC30W-SPbF as follows.First,it is designed expressly for Switch-Mode Power Supply and PFC (power factor correction) appl...
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT WARP 600V 23A D2PAK
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT WARP 600V 23A TO220AB
Vendor:Other Category:Other
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 600V 23A D2PAK The IRG4BC30U-SPbF is designed as insulated gate bipolar transistor. The IRG4BC30U-SPbF has four features.The first one is about its ultrafast which means optimized for high operating frequencies 8-40KHz in ha...
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 600V 23A TO220AB
Mfg:IR D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 600V 23A TO220AB
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 600V 23A TO-220AB
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 600V 23A TO-220AB
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT DIODE 600V 34A D2PAK
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT ULTRA FAST 600V 28A D2PAKThe IRG4BC30K-SPbF is designed as one kind of insulated gatebipolar transistor which producted by the International Rectifier.Featrues of the IRG4BC30K-SPbF are:(1)hign short circuit rating optimized for motor control,T...
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 600V 28A D2PAK
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 600V 28A TO-220AB
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT UFAST 600V 28A TO-220AB
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT FAST 600V 31A TO220AB The IRG4BC30FPbF has the following features including fast optimiazed for medium operating frequencies;generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3;lead-f...
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 600V 31A D2PAKThe IRG4BC30FD-S is designed as insulated gate bipolar transistor with hyperfast diode.The IRG4BC30FD-S has three features. (1)Fast: optimized for medium operating frequencies (1-5 KHz in hard switching, >20kHz in res...
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 600V 31A TO220AB The IRG4BC30FD1PbF(Fast CoPack IGBT) possess many features such asa Fast : optimized for medium operating frequencies, ( 1-5 kHz in hard switching , > 20kHz in resonant mode). Generation 4 IGBT design provides t...
Vendor:Other Category:Other
IRG4BC30FD1 is an excellent product with four unique features : The first one is fast becuase that it is optimized for medium operating frequencies(1-5 kHz in hard switching , faster than 20 kHz in resonant mode). ...
Mfg:IR Pack:04+ D/C:220 Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT W/DIODE 600V 31A TO-220AB
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT FAST 600V 31A TO-220AB
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT WARP 600V 13A D2PAK
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Vendor:International Rectifier Category:Discrete Semiconductor Products
IGBT N-CH W/DIODE 600V 13A D2PAK
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