IRG4IBC20KDPBF

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Power Dissipation : 34 W
Package / Case : TO-220FP
Collector-Emitter Saturation Voltage : 2.8 V
Continuous Collector Current at 25 C : 11.5 A


Features:

• High switching speed optimized for up to 25kHz with low VCE(on)
• Short Circuit Rating 10s @ 125°C, V_GE = 15V
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation
• IGBT co-packaged with HEXFREDTM ultrafast,ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-220 FULLPAK
• Lead-Free


Specifications

	Parameter	Max.	Units
VCES	Collector-to-Emitter Voltage	600	V
IC @ TC = 25	Continuous Collector Current	11.5	A
IC @ TC = 100	Continuous Collector Current	6.3	A
ICM	Pulse Collector Current	23	A
ILM	Clamped Inductive Load Current	24	A
IF @TC = 100	Diode Continous Forward Current	6.3	A
IFM	Maximum Repetitive Forward Current	24	A
tsc	Short Circuit Withstand Time	10	s
VISOL	RMS Isolation Voltage, Terminal to Case, t = 1 min	2500	V
VGE	Gate-to-Emitter Voltage	±20	V
PD @ TC = 25°C	Maximum Power Dissipation	34	W
PD @ TC = 100°C	Maximum Power Dissipation	14	W
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 sec.	300 (0.063 in. (1.6mm) from case)
	Mounting Torque, 6-32 or M3 Screw	10 lbf`in (1.1 N`m)

Parameters:

Technical/Catalog Information	IRG4IBC20KDPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	11.5A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 9A
Power - Max	34W
Mounting Type	Through Hole
Package / Case	TO-220-3 Fullpak (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4IBC20KDPBF IRG4IBC20KDPBF