IRG4BAC50W Selling Leads, Price trend, IRG4BAC50W DataSheet download, circuit diagram from SeekIC.com

Features: • Designed expressly for switch-mode power supply and PFC (power factor correction) applications• Industry-benchmark switching losses improve efficiency of all power supply topologies• 50% reduction of Eoff parameter• Low IGBT conduction losses• Latest gener...

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SeekIC No. : 004377647 Detail

IRG4BAC50W: Features: • Designed expressly for switch-mode power supply and PFC (power factor correction) applications• Industry-benchmark switching losses improve efficiency of all power supply top...

IRG4BAC50W Data Sheet

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Part Number:: IRG4BAC50W
Supply Ability:: 5000

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Upload time: 2024/11/24

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DIODE IGBT 600V SUPER 220

Product Details

Description

Features:

• Designed expressly for switch-mode power supply and PFC (power factor correction) applications
• Industry-benchmark switching losses improve efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest generation IGBT design and construction offers tighter parameters distribution, exceptional reliability

Specifications

	Parameter	Max.	Units
V_CES	Collector-to-Emitter Breakdown Voltage	600	V
I_C @ T_C = 25°C	Continuous Collector Current	55	A
I_C@ T_C = 100°C	Continuous Collector Current	27
I_CM	Pulsed Collector Current	220
I_LM	Clamped Inductive Load Current	220
V_GE	Gate-to-Emitter Voltage	± 20	V
E_ARV	Reverse Voltage Avalanche Energy	170	mJ
P_D @ T_C= 25°C	Maximum Power Dissipation	200	W
P_D @ T_C = 100°C	Maximum Power Dissipation	78	W
T_JT_STG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds	300 (0.063 in. (1.6mm) from case)	°C
	Mounting torque, 6-32 or M3 screw.	10 lbf`in (1.1N`m)

Thermal Resistance

	Parameter	Typ.	Max.	Units
R_JC	Junction-to-Case	-	0.64	°C/W
R_CS	Case-to-Sink, Flat, Greased Surface	0.50	-
R_JA	Junction-to-Ambient,typical socket mount	-	40
Wt	Weight	TBD	-	g (oz)

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IRG4BAC50W

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