IRG4CC71KB

The IRG4CC71KB IGBT is a die in wafer form. for customers requiring product supplied as known good die(KGD) or requiring specific die level testing, please contact your local IR sales. Three shipping options are offered as standard: un-sawn wafer, die in waffle pack, die on film Tape and Reel is also available for some products. Please consult your local IR sales office or email http://die.irf.com for additional information.Please specify your required shipping option when requesting prices and ordering Die product. If notspecified, Un-sawn wafer will be assumed.

The features of IRG4CC71KB can be summarized as (1)600 V; (2)size 7.1; (3)ultra-fast speed; (4)circuit rated rated; (5)6" Wafer.

The electricla characteristic and mechanical data of IRG4CC71KB are (1)VCE (on) collector-to-emitter saturation voltage: 1.7V Max. (IC = 10A, TJ = 25°C, VGE = 15V); (2)V(BR)CES colletor-to-emitter breakdown voltage: 600V Min. (TJ = 25°C, ICES = 250A, VGE = 0V); (3)VGE(th) gate threshold voltage: 3.0V Min., 6.5V Max.(VGE = VCE , TJ =25°C, IC =250A); (4)ICES zero gate voltage collector current: 300 A Max. (TJ = 25°C, VCE = 600V); (5)IGES gate-to-emitter leakage current: ± 1.1 A Max. (TJ = 25°C, VGE = +/- 20V); (6)nominal backmetal composition, thickness: Cr-NiV-Ag ( 1kA-2kA-.2.5kA ); (7)nominal front metal composition, thickness: 99% Al, 1% Si (4 microns); (8)dimensions: 0.305" x 0.390"; (9)wafer diameter: 150mm, with std. < 100 > flat; (10)wafer thickness: .015" + / -.003"; (11)relevant die mechanical Dwg. Number01-5271; (12)minimum street width: 100 Microns; (13)reject ink dot size: 0.25mm Diameter Minimum; (14)ink dot location: consistent throughout same wafer lot; (15)recommended storage environment: store in original container, in dessicated nitrogen,  with no contamination; (16)recommended die attach conditions for optimum electrical results, die attach temperature should not exceed 300C.