IGBT Transistors 1200V UltraFast 4-20kHz
IRG4BH20K-LPBF: IGBT Transistors 1200V UltraFast 4-20kHz
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Features: • Standard: Optimized for minimum saturation voltage and low operating frequencies...
Features: • UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, &...
Features: • Designed expressly for switch-mode power supply and PFC (power factor correction...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1.2 KV | ||
Collector-Emitter Saturation Voltage : | 3.17 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 11 A | Power Dissipation : | 60 W | ||
Package / Case : | TO-262 | Packaging : | Tube |
The IRG4BH20K-LPbF has 5 features.The first one is high short circuit rating optimized for motor control,tsc = 10s,@360V VCE(start),TJ = 125,VGE = 15V. The second one is combines low conduction losses with high switching speed.The third one is latest generation design provides tighter parameter distribution and higher efficency than previous generations.The fourth one is lead-free.The last one is industry standard TO-262 package.
The IRG4BH20K-LPbF has 2 benefits.The first one is as a freewheeling diode we recommend our HEXFRED ultrafast,ultrasolft recovery diodes for minimum EMI/Noise and switching losses in the diode and IGBT.The second one is lastest generation 4 IGBTs offer highest power density motor controls possible.
The IRG4BH20K-LPbF has some information about absolute maximum ratings.VCES,when parameter is collector-to-emitter voltage,the max is 1200,the units is V.IC @ Tc =25 ,when parameter is continuous collecyor current,the max is 11,the units is A.IC @ Tc =100 ,when parameter is continuous collector current,the max is 5.0,the units is A.ICM,when parameter is pulsed collector current,the max is 22,the units is A.ILM,when parameter is clamped inductive load current,the max is 22,the units is A.tsc,when parameter is short circuit withstand time,the max is 10,the units is s.VGE,when parameter is gate-to-emitter voltage,the max is ±20,the units is V.EARV,when parameter is reverse voltage avalanche energy,the max is 130,the units is mJ.PD @ TA = 25,when parameter is power dissipation,the max is 60,the units is W.PD @ TA = 25,when parameter is power dissipation,the max is 10,the units is W.TJ and TSTG,when parameter is operating junction and storage temperature range,the max is -55 to +150,the units is .
At present there is not too much information about this model.If you are willing to find more about the IRG4BH20K-LPbF, please pay attention to our web! We will promptly update the relevant information.
Technical/Catalog Information | IRG4BH20K-LPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 11A |
Vce(on) (Max) @ Vge, Ic | 4.3V @ 15V, 5A |
Power - Max | 60W |
Mounting Type | Through Hole |
Package / Case | TO-262-3 (Straight Leads) |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRG4BH20K LPBF IRG4BH20KLPBF |