Series: -
Manufacturer: International Rectifier
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Input Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Power - Max: 100W
Packaging: Tube
Current - Collector (Ic) (Max): 31A
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
DescriptionThe IRG4BC30FD-S is designed as insulated gate bipolar transistor with hyperfast diode.
The IRG4BC30FD-S has three features. (1)Fast: optimized for medium operating frequencies (1-5 KHz in hard switching, >20kHz in resonant mode). (2)Generation 4 IGBT design provides tighter parameter distribution and high efficiency than generation 3. (3)IGBT co-packaged with HEXFRED ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations. That are all the main features.
Some absolute maximum ratings of IRG4BC30FD-S have been concluded into several points as follow. (1)Its collector to emitter voltage would be 600V. (2)Its continuous collector current would be 31A at 25°C and would be 17A at 100°C. (3)Its pulse collector current would be 120A. (4)Its clamped inductive load current would be 120A. (5)Its diode continuous forward current would be 12A. (6)Its diode maximum forward current would be 120A. (7)Itsgate to emitter voltage would be +/-20V. (8)Its maximum power dissipation would be 100W at 25°C and would be 42W at 100°C. (9)Its operating junction and storage temperature range would be from -55°C to +150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics of IRG4BC30FD-S are concluded as follow. (1)Its collector to emitter breakdown voltage would be min 600V. (2)Its temperature coeff. of breakdown voltage would be typ 0.69V/°C. (3)Its collector to emitter voltage would be typ 1.59V and max 1.8V at Ic=17A and would be typ 1.99V at Ic=31A and would be typ 1.7V at Ic=17A, Tj=150°C. (4)Its gate threshold voltage would be min 3.0V and max 6.0V. (5)Its threshold voltage temperature coefficient would be typ -11mV/°C. (6)Its forward transconductance would be min 6.1S and typ 10S. (7)Its zero gate voltage collector current would be max 250uA. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!
Parameters: | Technical/Catalog Information | IRG4BC30FD-S |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 31A |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 17A |
| Power - Max | 100W |
| Mounting Type | Surface Mount |
| Package / Case | D²Pak, TO-263 (2 leads + tab) |
| Packaging | Tube |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRG4BC30FD S
IRG4BC30FDS
|
IRG4BC30FD-S Data Sheet
