IRG4BC40WPBF

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Continuous Collector Current at 25 C : 40 A
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220AB
Power Dissipation : 160 W
Collector-Emitter Saturation Voltage : 2.5 V


Features:






Specifications






Description

      IRG4BC40WPbF is a kind of insulated gate bipolar transistor.Here you can get some information about the features of IRG4BC40WPbF.First,it is designed expressly for switch-mode power supply and PFC (power factor correction) applications.Secondly,industry-benchmark switching losses improve efficiency of all power supply topolohies.Then is 50% reduction of Eoff parameter.Next is low IGBT conduction losses.Besides,latest-generation IGBT design and construction offers tighter parameters distribution,exceptional reliability.At last,it is lead free.
      The following is about the absolute maximum ratings of IRG4BC40WPbF.The maximum V_CES (collector-to-emitter breakdown voltage) is 600 V.The maximum I_C (continuous collector current) is 40 A at T_C=25 and 20 A at T_C=100.The maximum I_CM (pulsed collector current) is 160 A.The maximum I_LM (clamped inductive current) is 160 A.The maximum V_GE (gate-to-emitter voltage) is ±20 V.The maximum E_ARV (reverse voltage avalanche energy) is 160 mJ.The maximum P_D (power dissipation) is 160 W at T_C=25 and 65 W at T_C=100.The T_J and T_STG (operating junction and storage temperature range) are both from -55 to +150.The soldering temperature for 10 seconds is 300 (1.6mm from case).Then is about the thermal resistance.The maximum R_JA (Junction-to-Ambient,typical socket mount) is 80/W.The maximum R_JC (Junction-to-Case) is 0.77/W.The typical R_CS (case-to-sink,flat,greased surface) is 0.5/W.
      There are the electrical characteristics of IRG4BC40WPbF at T_J=25.The minimum V_(BR)CES (collector-to-emitter breakdown voltage) is 600 V at V_GE=0 V,I_C=250A.The minimum V_(BR)ECS (emitter-to-collector breakdown voltage) is 18 V at V_GE=0 V,IC=1.0 A.The typical V_(BR)CES/T_J (breakdown voltage temperature coefficient) is 0.44 V/ at V_GE=0 V,I_C=1.0 mA.The minimum V_GE(th) (gate threshold voltage) is 3.0 V and the maximum is 6.0 V at V_CE=V_GE,I_C=250A.The minimum gfe (forward transcoductance) is 18 S and the maximum is 28 S at V_CE=100 V,I_C=20 A.The maximum I_GES (gate-to-emitter) is ±100 nA at V_GE=±20 V.

Parameters:

Technical/Catalog Information	IRG4BC40WPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	40A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 20A
Power - Max	160W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4BC40WPBF IRG4BC40WPBF