IRG4IBC20UDPBF

IGBT Transistors 600V UltraFast 8-60kHz

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IRG4IBC20UDPBF: IGBT Transistors 600V UltraFast 8-60kHz

floor Price/Ceiling Price

US $ .94~1.93 / Piece | Get Latest Price
Part Number:
IRG4IBC20UDPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.93
  • $1.32
  • $.98
  • $.94
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.1 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 11.4 A Power Dissipation : 34 W
Package / Case : TO-220FP Packaging : Tube    

Description

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.1 V
Maximum Gate Emitter Voltage : +/- 20 V
Power Dissipation : 34 W
Package / Case : TO-220FP
Continuous Collector Current at 25 C : 11.4 A


Features:

• 2.5kV, 60s insulation voltage
• 4.8 mm creapage distance to heatsink
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes
• Tighter parameter distribution
• Industry standard Isolated TO-220 FullpakTM outline
• Lead-Free



Specifications

Parameter

Max.

Units
VCES Collector-to-Emitter Voltage

600

V
IC @ TC = 25 Continuous Collector Current

11.4

A
IC @ TC = 100 Continuous Collector Current

6.0

ICM Pulsed Collector Current

52

ILM Clamped Inductive Load Current

52

IF @ TC = 100 Diode Continuous Forward Current

6.5

IFM Diode Maximum Forward Current

52

Visol RMS Isolation Voltage, Terminal to Case

2500

V
VGE Gate-to-Emitter Voltage

± 20

PD @ TC = 25 Maximum Power Dissipation

34

W
PD @ TC = 100 Maximum Power Dissipation

14

TJ
TSTG
Operating Junction and
Storage Temperature Range

-55 to +150

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw.

10 lbf•in (1.1 N•m)

Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10H, RG = 50 (figure 19)
Pulse width 80s; duty factor 0.1%.




Parameters:

Technical/Catalog InformationIRG4IBC20UDPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)11.4A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 6.5A
Power - Max34W
Mounting TypeThrough Hole
Package / CaseTO-220-3 Fullpak (Straight Leads)
Packaging*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRG4IBC20UDPBF
IRG4IBC20UDPBF



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