IRG4BC40FPBF

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220AB
Power Dissipation : 160 W
Collector-Emitter Saturation Voltage : 1.7 V
Continuous Collector Current at 25 C : 49 A


Features:






Specifications






Description

      Features of IRG4BC40FPbF are these four points:(1)fast:optimized for medium operating frequencies(1-5KHz in hard switching,>20 KHz in resonant mode);(2)generation 4 IGBT design provides tighter parameter distribution and higher efficiency;(3)industry standard TO-220AB package;(4)lead-free.
      Benefits of IRG4BC40FPbF are:generation 4 IGBTs offer highest efficiency available;IGBTs optimized for specified application conditions;designed to be a "drop-in" replacement for equivalent industry-standard generation 3 IR IGBTs.
      Absolute maximum ratings of IRG4BC40FPbF are:(1)collector-to-emitter breakdown voltage is 600V;(2)continuous collector current is 49A;(3)pilsed collector current is 200A;(4)reverse voltage avalanche energy is 15mJ;(5)maximum power dissipation is 65-160W;(6)operating junction and storage temperature range is -55 to +150.

Parameters:

Technical/Catalog Information	IRG4BC40FPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	49A
Vce(on) (Max) @ Vge, Ic	1.7V @ 15V, 27A
Power - Max	160W
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRG4BC40FPBF IRG4BC40FPBF