IRG4IBC30WPBF

IGBT Transistors 600V Warp 60-150kHz

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SeekIC No. : 00142603 Detail

IRG4IBC30WPBF: IGBT Transistors 600V Warp 60-150kHz

floor Price/Ceiling Price

US $ .89~1.83 / Piece | Get Latest Price
Part Number:
IRG4IBC30WPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.83
  • $1.25
  • $.93
  • $.89
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/6/6

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.7 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 17 A Power Dissipation : 45 W
Package / Case : TO-220FP Packaging : Tube    

Description

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220FP
Collector-Emitter Saturation Voltage : 2.7 V
Continuous Collector Current at 25 C : 17 A
Power Dissipation : 45 W


Features:

`Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
`2.5kV, 60s insulation voltage
`ndustry-benchmark switching losses improve efficiency of all power supply topologies
`50% reduction of Eoff parameter
`Low IGBT conduction losses
`Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
`Industry standard Isolated TO-220 FullpakTM outline
`Lead-Free



Application

·Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode)
·Of particular benefit to single-ended converters and boost PFC topologies 150W and higher
·Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz)



Specifications

Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current
17
A
IC @ TC = 100°C
Continuous Collector Current
8.4
ICM
Pulsed Collector Current
92
ILM
Clamped Inductive Load Current
92
VGE
Gate-to-Emitter Voltage
± 20
V
EARV
Reverse Voltage Avalanche Energy
180
mJ
PD @ TC = 25°C
Maximum Power Dissipation
45
W

PD @ TC = 100°C

Maximum Power Dissipation

15
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm from case )
Mounting torque, 6-32 or M3 screw.
10 lbf•in (1.1N•m)



Parameters:

Technical/Catalog InformationIRG4IBC30WPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)17A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 12A
Power - Max45W
Mounting TypeThrough Hole
Package / CaseTO-220-3 Fullpak (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRG4IBC30WPBF
IRG4IBC30WPBF



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