IRG4BC30FD1

IGBT W/DIODE 600V 31A TO-220AB

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SeekIC No. : 003434209 Detail

IRG4BC30FD1: IGBT W/DIODE 600V 31A TO-220AB

floor Price/Ceiling Price

US $ 2.52~2.52 / Piece | Get Latest Price
Part Number:
IRG4BC30FD1
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~100
  • Unit Price
  • $2.52
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Quick Details

Series: - Manufacturer: International Rectifier
IGBT Type: - Frequency : 0.5 GHz to 2 GHz
Voltage - Collector Emitter Breakdown (Max): 600V Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Current - Collector (Ic) (Max): 31A Power - Max: 100W
Input Type: Standard Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220AB    

Description

Series: -
Manufacturer: International Rectifier
IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 600V
Input Type: Standard
Power - Max: 100W
Mounting Type: Through Hole
Packaging: Tube
Current - Collector (Ic) (Max): 31A
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A


Features:






Specifications






Description

      IRG4BC30FD1 is an excellent product with four unique features : The first one is fast becuase that it is optimized for medium operating frequencies(1-5 kHz in hard switching , faster than 20 kHz in resonant mode). The second one is generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The third one is IGBT co-packaged with hyperfast FRED diodes for ultra low recovery characteristics. The forth one is industry standard TO-220AB package. Otherwise , it also has three benefits. The frist one is generation 4 IGBT's offer highest efficiency available. The second one is IGBT's optimized for specific application conditions. The third one is FRED diodes optimized for performance with IGBT's and minimized recovery chacteristics require less/no snubbing.
     The, there are some absolute maximum ratings about IRG4BC30FD1. Collector-to-Emitter Voltage (VCES) is 600 V max. Continuous Collector Current(IC @ TC = 25°C) is 31 A.Continuous Collector Current(IC @ TC = 100°C) is 17 A. Pulse Collector Current (ICM ) is 120 A. Clamped Inductive Load current(ILM ) is 120 A. Diode Continuous Forward Current(IF @ TC = 100°C) is 8 A. Diode Maximum Forward Current(IFM ) is 16 A. Gate-to-Emitter Voltage(VGE ) is ±20 V. Maximum Power Dissipation(PD @ TC = 25°C ) is 100 W.Maximum Power Dissipation(PD @ TC = 100°C) is 42 W. Operating Junction and Storage Temperature Range(TJ,TSTG) is from -55°C to +150°C.
      At last, there are some thermal and mechanical characteristics about IRG4BC30FD1.Junction-to-Case- IGBT (RJC ) is 1.2 °C/W.
Junction-to-Case- Diode(RJC) is 2.0 °C/W. Case-to-Sink, flat, greased surface(RCS ) is 0.50°C/W . Junction-to-Ambient, typical socket mount (RJA ) is 80°C/W. Weight(Wt) is 2.0g (0.07oz.).
     In a word , this is just a simple introduction of this kind of product, and if you are interestd in it or you want to know detailed information about IRG4BC30FD1, please come to know more about our web  for that you will get more imformation about IRG4BC30FD1. Thanks for your attention to our web and our information!


 






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