IGBT W/DIODE 600V 31A TO-220AB
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Features: • Standard: Optimized for minimum saturation voltage and low operating frequencies...
Features: • UltraFast: Optimized for high operating frequencies 8-40kHz in hard switching, &...
Features: • Designed expressly for switch-mode power supply and PFC (power factor correction...
Series: | - | Manufacturer: | International Rectifier | ||
IGBT Type: | - | Frequency : | 0.5 GHz to 2 GHz | ||
Voltage - Collector Emitter Breakdown (Max): | 600V | Vce(on) (Max) @ Vge, Ic: | 1.8V @ 15V, 17A | ||
Current - Collector (Ic) (Max): | 31A | Power - Max: | 100W | ||
Input Type: | Standard | Mounting Type: | Through Hole | ||
Package / Case: | TO-220-3 | Supplier Device Package: | TO-220AB |
IRG4BC30FD1 is an excellent product with four unique features : The first one is fast becuase that it is optimized for medium operating frequencies(1-5 kHz in hard switching , faster than 20 kHz in resonant mode). The second one is generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3. The third one is IGBT co-packaged with hyperfast FRED diodes for ultra low recovery characteristics. The forth one is industry standard TO-220AB package. Otherwise , it also has three benefits. The frist one is generation 4 IGBT's offer highest efficiency available. The second one is IGBT's optimized for specific application conditions. The third one is FRED diodes optimized for performance with IGBT's and minimized recovery chacteristics require less/no snubbing.
The, there are some absolute maximum ratings about IRG4BC30FD1. Collector-to-Emitter Voltage (VCES) is 600 V max. Continuous Collector Current(IC @ TC = 25°C) is 31 A.Continuous Collector Current(IC @ TC = 100°C) is 17 A. Pulse Collector Current (ICM ) is 120 A. Clamped Inductive Load current(ILM ) is 120 A. Diode Continuous Forward Current(IF @ TC = 100°C) is 8 A. Diode Maximum Forward Current(IFM ) is 16 A. Gate-to-Emitter Voltage(VGE ) is ±20 V. Maximum Power Dissipation(PD @ TC = 25°C ) is 100 W.Maximum Power Dissipation(PD @ TC = 100°C) is 42 W. Operating Junction and Storage Temperature Range(TJ,TSTG) is from -55°C to +150°C.
At last, there are some thermal and mechanical characteristics about IRG4BC30FD1.Junction-to-Case- IGBT (RJC ) is 1.2 °C/W.
Junction-to-Case- Diode(RJC) is 2.0 °C/W. Case-to-Sink, flat, greased surface(RCS ) is 0.50°C/W . Junction-to-Ambient, typical socket mount (RJA ) is 80°C/W. Weight(Wt) is 2.0g (0.07oz.).
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