IRG4BC30FD1PBF

IGBT Transistors 600V Fast 1-5kHz >20kHz resonant mode

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IRG4BC30FD1PBF: IGBT Transistors 600V Fast 1-5kHz >20kHz resonant mode

floor Price/Ceiling Price

US $ .96~1.97 / Piece | Get Latest Price
Part Number:
IRG4BC30FD1PBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.97
  • $1.34
  • $1
  • $.96
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2024/11/24

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.8 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 31 A Power Dissipation : 100 W
Package / Case : TO-220AB Packaging : Tube    

Description

Gate-Emitter Leakage Current :
Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max : 600 V
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.8 V
Package / Case : TO-220AB
Power Dissipation : 100 W
Continuous Collector Current at 25 C : 31 A


Features:






Specifications






Description

      The IRG4BC30FD1PbF(Fast CoPack IGBT) possess many features such asa Fast : optimized for medium operating frequencies, ( 1-5 kHz in hard switching , > 20kHz in resonant mode). Generation 4 IGBT design provides tighter pa rameter distribution and higher efficiency than Generation 3,  IGBT co-packagedw with Hyperfast FRED diodes for ultra Iow reCovery Characteristics.(Industry standard TO -220AB paCkage; Lesd-Free).
      The IRG4BC30FD1PbF has many benefits for example Generation 4 IGBT's offer highest efficiency available, IGBT's optimized for specific application conditions, FRED diodes optimized for performancewithIGBT's, Minimized recovery characteristics require less/no snubbing.
      Some parameters of the IRG4BC30FD1PbF in the aspect of maximum ratings are Vces(Collector-to-Emitter Voltage)=600(max)V, Ic @ Tc=25(continuous collector current)=31(max)A, Ic @ Tc=100(continuous collector current)=17(max)A, Icm(Pulse Collector Current (Ref. Fig.C.T.5))=120(max)A, Ilm(Clamped Inductive Load current)=120(max)A, If @ Tc=100(Diode Continuous foewardcurrent)=8(max)A, If(diode maximum foeward Current)=16(max)A, pd @Tc=25(Maximum power dissipation)=100(max)W, pd @Tc=100(Maximum power dissipation)=42(max)W, TJ, Tstg(Operating Junction and Storaqe Temperature Ranqe)= -55 to +150, Storage Temperature Range, for 10 sec. =300(0.063 in.(1.6mm)from case).






Parameters:

Technical/Catalog InformationIRG4BC30FD1PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)31A
Vce(on) (Max) @ Vge, Ic1.8V @ 15V, 17A
Power - Max100W
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRG4BC30FD1PBF
IRG4BC30FD1PBF



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