IRG4BC30K-SPBF

IGBT Transistors

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SeekIC No. : 00142879 Detail

IRG4BC30K-SPBF: IGBT Transistors

floor Price/Ceiling Price

US $ .88~1.8 / Piece | Get Latest Price
Part Number:
IRG4BC30K-SPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.8
  • $1.23
  • $.92
  • $.88
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.7 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 28 A Power Dissipation : 100 W
Maximum Operating Temperature : + 150 C Package / Case : D2PAK
Packaging : Tube    

Description

Gate-Emitter Leakage Current :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 28 A
Collector-Emitter Saturation Voltage : 2.7 V
Power Dissipation : 100 W
Package / Case : D2PAK


Features:






Specifications






Description

The IRG4BC30K-SPbF is designed as one kind of insulated gatebipolar transistor which producted by the  International Rectifier.Featrues of the IRG4BC30K-SPbF are:(1)hign short circuit rating optimized for motor control,Tsc=10 us,@360 V Vce(start),Tj=125,Vge=15 V;(2)combines low conduction losses with high switching speed;(3)lastest generation design provides tighter parameter distribution and higher efficiency than previous generations;(4)lead-free.

Benefits of the IRG4BC30K-SPbF are:(1)as a freewheeling diode we recommend our HEXFRED ultrafast,ultrasoft recovery diodes for minimum EMI/noise and switching losses in the diode and IGBT;(2)lastest generation 4 IGBTs offer highest power density motor controls possible;(3)this part replaces the IRG4BC30K-S and IRG4BC30M-S devices.

The absolute maximum ratings of the IRG4BC30K-SPbF can be summarized as:(1)collector-to-emitter voltage:600 V;(2)comtinuous collector current:28 A;(3)continuous collector current:16 A;(4)pulsed collector current:58 A;(5)clamped inductive load current:58 A;(6)gate-to-emitter voltage:+/-20 V;(7)reverse voltage avalanche energy:260 mJ;(8)maximum power dissipation:100 W;(9)operating junction and storage temperature range:-55 to +150;(10)soldering temperature,for 10 sec.:300.If you want to know more information about this part,please download the datasheet in www.seekic.com and www.chinaicmart.com .






Parameters:

Technical/Catalog InformationIRG4BC30K-SPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)28A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 16A
Power - Max100W
Mounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRG4BC30K SPBF
IRG4BC30KSPBF



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