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Index I : IRFZ44NL,IRFZ44N,IRFW830B,
IRFZ44NL
Mfg:TO-262 Pack:7850 D/C:IR Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ44NL utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...IRFZ44N
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 49A TO-220ABAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ44N utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed...IRFZ44ESPbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 48A D2PAKFifth Generation HEXFETs from International Rectifier IRFZ44ESPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ...IRFZ44ES
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier IRFZ44ES utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...IRFZ44EPbF
Mfg:10000 Pack:IR D/C:TO-220 Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 48A TO-220ABFifth Generation HEXFETs from International Rectifier IRFZ44EPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ru...IRFZ44ELPbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 48A TO-262Fifth Generation HEXFETs from International Rectifier IRFZ44ELPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ...IRFZ44EL
Mfg:IR Pack:TO-262 D/C:06+ Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier IRFZ44EL utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...IRFZ44E
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier IRFZ44E utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...IRFZ44CN
Vendor:Other Category:Other
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices IRFZ44CN are particularly well suited for bridge circuits where diode speed and commutatin...IRFZ44, SiHFZ44
Vendor:Other Category:Other
Power MOSFET IRFZ44, SiHFZ44IRFZ40FI
Mfg:ST Pack:TO-220F D/C:08+ Vendor:Other Category:Other
IRFZ40, SiHFZ40
Vendor:Other Category:Other
Power MOSFET IRFZ40, SiHFZ40IRFZ40
Mfg:ST Pack:TO-220 D/C:08+ Vendor:Other Category:Other
IRFZ34VSPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 30A D2PAKAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ34VSPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching s...IRFZ34VS
Mfg:IR Pack:to-263 D/C:500 Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ34VS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...IRFZ34VPbF
Mfg:TO-220AB Pack:7850 D/C:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 30A TO-220ABAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ34VPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching sp...IRFZ34VLPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 30A TO-262Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ34VLPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching s...IRFZ34VL
Pack:TO-262 D/C:5000 Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ34VL utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...IRFZ34V
Mfg:IR Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ34V utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed ...IRFZ34S
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier IRFZ34S utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...IRFZ34NS
Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier IRFZ34NS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...IRFZ34NPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 29A TO-220ABFifth Generation HEXFETs from International Rectifier IRFZ34NPbF utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed ...IRFZ34NL
Mfg:TO-262 Pack:7850 D/C:IR Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier IRFZ34NL utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...IRFZ34N
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 29A TO-220ABFifth Generation HEXFETs from International Rectifier IRFZ34N utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and...IRFZ34L
Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier IRFZ34L utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...IRFZ34E
Mfg:IR Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier IRFZ34E utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and...IRFZ34, SiHFZ34
Vendor:Other Category:Other
Power MOSFET IRFZ34, SiHFZ34IRFZ24VSPbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 17A D2PAKAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ24VSPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching s...IRFZ24VS
Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ24VS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...IRFZ24VPbF
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 17A TO-220ABAdvanced HEXFET® Power MOSFETs from International Rectifier IRFZ24VPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching sp...IRFZ24VLPbF
Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 60V 17A TO-262Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ24VLPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching ...IRFZ24VL
Mfg:IR Pack:TO-262 D/C:5000 Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ24VL utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...IRFZ24V
Vendor:Other Category:Other
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ24V utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed...IRFZ24S
Mfg:IR Pack:TO-263 D/C:05+ Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier IRFZ24S utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...IRFZ24NS
Mfg:IR Pack:D2-PAK D/C:09+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 17A D2PAKFifth Generation HEXFETs from International Rectifier IRFZ24NS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...IRFZ24NPbF
Mfg:IR Pack:TO-220 D/C:08+ Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 17A TO-220ABFifth Generation HEXFET® power MOSFETs from International Rectifier IRFZ24NPbF utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fa...IRFZ24N
Mfg:IR Vendor:International Rectifier Category:Discrete Semiconductor Products
MOSFET N-CH 55V 17A TO-220ABFifth Generation HEXFET® power MOSFETs from International Rectifier IRFZ24N utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast s...IRFZ24LPbF
Vendor:Other Category:Other
Fifth Generation HEXFETs from International Rectifier IRFZ24LPbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ru...IRFZ24L
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier IRFZ24L utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...IRFZ24A
Mfg:SAMSUNG Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
IRFZ24
Vendor:Other Category:Other
The IRFZ24 has five features.The first one is dynamic dv/dt rating.The second one is 175 operating temperature.The third one is fast switching.The fourth one is ease of paralleling.The fifth one is simple drive requireme...IRFZ14S
Mfg:26521 Pack: I R Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier IRFZ14S utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugg...IRFZ14L
Mfg:IR Pack:TO-220 D/C:05+ Vendor:Other Category:Other
Third Generation HEXFETs from International Rectifier IRFZ14L utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge...IRFZ14, SiHFZ14
Vendor:Other Category:Other
Power MOSFET IRFZ14, SiHFZ14IRFZ14
Vendor:Other Category:Other
The IRFZ14 is a device belongs to third generation HEXFETs from international rectifier which provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effecti...IRFZ10, SiHFZ10
Vendor:Other Category:Other
Power MOSFET IRFZ10, SiHFZ10IRFZ10
Mfg:INTERNATIONALRECTIFIER Pack:DIP/SOP D/C:08+ Vendor:Other Category:Other
Third Generation Power MOSFETs IRFZ10 from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The IRFZ10 TO-220 package is univer...IRFY9240M
Vendor:Other Category:Other
IRFY9240CM
Mfg:IR Pack:TO-257AA D/C:05+ Vendor:Other Category:Other
IRFY9240C
Vendor:Other Category:Other
IRFY9240
Vendor:Other Category:Other
IRFY9230
Vendor:Other Category:Other
IRFY9140M
Mfg:IR Pack:TO-257AA D/C:05+ Vendor:Other Category:Other
IRFY9140CM
Mfg:IR Pack:TO-257AA D/C:05+ Vendor:Other Category:Other
IRFY9140C
Mfg:IR Pack:TO-257AA D/C:05+ Vendor:Other Category:Other
IRFY9140
Mfg:SML Pack:TO-220 Vendor:Other Category:Other
IRFY9130M
Vendor:Other Category:Other
IRFY9130CM
Mfg:IR Pack:TO-257AA D/C:05+ Vendor:Other Category:Other
IRFY9130C
Mfg:IR Pack:TO-3 Vendor:Other Category:Other
IRFY9130
Mfg:IR Pack:07+ Vendor:Other Category:Other
IRFY9120
Vendor:Other Category:Other
IRFY440M
Vendor:Other Category:Other
IRFY440CM
Mfg:IOR Pack:TO-220 D/C:6+ Vendor:Other Category:Other
IRFY440C
Vendor:Other Category:Other
IRFY440
Vendor:Other Category:Other
IRFY430M-T257
Vendor:Other Category:Other
IRFY430M
Vendor:Other Category:Other
IRFY430CM
Mfg:IR Pack:TO-257AA D/C:05+ Vendor:Other Category:Other
IRFY430C
Vendor:Other Category:Other
IRFY430
Vendor:Other Category:Other
IRFY420
Vendor:Other Category:Other
All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. IRFY420IRFY340M
Vendor:Other Category:Other
IRFY340CM
Mfg:IR Pack:TO-257AA D/C:05+ Vendor:Other Category:Other
IRFY340C
Vendor:Other Category:Other
IRFY340
Mfg:IR Pack:07+ Vendor:Other Category:Other
IRFY330
Vendor:Other Category:Other
IRFY240M
Vendor:Other Category:Other
IRFY240CM
Mfg:IR Pack:TO-257AA D/C:05+ Vendor:Other Category:Other
IRFY240
Mfg:IR Pack:TO-220 D/C:06+ Vendor:Other Category:Other
IRFY230
Vendor:Other Category:Other
IRFY220
Mfg:IR Pack:07+ Vendor:Other Category:Other
IRFY140M
Vendor:Other Category:Other
IRFY140CM
Mfg:IR Pack:TO-257AA D/C:05+ Vendor:Other Category:Other
IRFY140C
Vendor:Other Category:Other
IRFY140
Vendor:Other Category:Other
IRFY1310M-T257
Vendor:Other Category:Other
IRFY130M
Vendor:Other Category:Other
IRFY130CM
Mfg:IR Pack:TO-257AA D/C:05+ Vendor:Other Category:Other
IRFY130C
Vendor:Other Category:Other
IRFY130
Vendor:Other Category:Other
IRFY120
Vendor:Other Category:Other
IRFY11N50CMA
Mfg:IR Pack:TO-257AA D/C:05+ Vendor:Other Category:Other
IRFY044M
Vendor:Other Category:Other
IRFY044CM
Mfg:IR Pack:TO-257AA D/C:05+ Vendor:Other Category:Other
IRFY044C
Vendor:Other Category:Other
IRFY044
Vendor:Other Category:Other
IRFWI530A
Mfg:FAIRCHILD Pack:TO Vendor:Other Category:Other
IRFW840B
Mfg:FAIRCHILD Pack:TO-263 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW840B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...IRFW840
Vendor:Other Category:Other
Features of the IRFW840 are:(1)8.0A,500V,RDS(on)=0.8@VCS=10V;(2)low gate charge (typical 41 nC);(3)low crss(typical 35 pF);(4)fast switching;(5)100% avalanche tested;(6)improved dv/dt capability. The absolute maximum ra...IRFW830B
Mfg:FAIRCHILD Pack:TO-263 D/C:05+ Vendor:Other Category:Other
These N-Channel enhancement mode power field effect transistors IRFW830B are produced using Fairchild's proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resis...