IRFZ14

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 10 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.2 Ohms


Description

The IRFZ14 is a device belongs to third generation HEXFETs from international rectifier which provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package of IRFZ14 is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

The features of IRFZ14 can be summarized as (1)dynamic dv/dt rating; (2)175°c operating temperature; (3)fast switching; (4)ease of paralleling; (5)simple drive requirements.

The absolute maximum ratings of IRFZ14 are (1)ID @ TC = 25°C continuous drain current, vcs @ 10V: 10A; (2)ID @TC = 100°C continuous drain current, VGs 10@10V: 7.2A; (3)IDM pulsed drain current: 40A; (4)PD @TC= 25°C power dissipation: 43W; (5)linear derating factor: 0.29 W/°C; (6)VGS gate-to-source voltage: ±20V; (7)EAS single pulse avalanche energy: 47mJ; (8)dv/dt peak diode recovery dv/dt: 4.5 v/ns; (9)operating junction and storage temperature range TJ, TSTG: -55 to +175°C; (10)soldering temperature, for 10 seconds: 300 (1: 6mm from case).