IRFZ10

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 10 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.2 Ohms


Features:

• Dynamic dv/dt Rating
• 175 Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available


Specifications

Parameter			Symbol	Limit	Unit
Gate-Source Voltage			VGS	±20	V
Drain Current-Continuous	VGS at 10 V	TC=25	ID	10 7.2	A
		TC=100
Pulsed Drain Currenta			IDM	40	A
Linear Derating Factor				0.29	W/
Single Pulse Avalanche Energyb			EAS	47	mJ
Maximum Power Dissipation TC=25			PD	43	W
Peak Diode Recovery dV/dtc			dV/dt	4.5	V/ns
Operating Junction and S torage Temperature R ange			TJ, TSTG	-55 to 175
Soldering Recommendations (Peak Temperature)		for 10 s		300d
Mounting Torque		6-32 or M3 screw		10	lbf ` in N ` m
				1.1

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 , L = 1.8 mH, RG = 25 , IAS = 7.2 A (see fig. 12).
c. ISD 10 A, dI/dt 90 A/s, VDD VDS, TJ 175 .
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply


Description

Third Generation Power MOSFETs IRFZ10 from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The IRFZ10 TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.