Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Mounting Style
: Through Hole
Packaging
: Tube
Package / Case
: TO-220AB
Gate-Source Breakdown Voltage
: 20 V
Drain-Source Breakdown Voltage
: 55 V
Continuous Drain Current
: 26 A
Features: ` Advanced Process Technology
` Ultra Low On-Resistance
` Dynamic dv/dt Rating
` 175 Operating Temperature
` Fast Switching
` Ease of Paralleling
` Lead-FreeSpecifications
| |
Parameter |
Max. |
Units |
| ID @ TA = 25 |
Continuous Drain Current, VGS @ 10V |
29 |
A |
| ID @ TA = 70 |
Continuous Drain Current, VGS @ 10V |
20 |
| IDM |
Pulsed Drain Current |
100 |
| PD @TA = 25 |
Power Dissipation |
68 |
W |
| |
Linear Derating Factor |
0.45 |
mW/ |
| VGS |
Linear Derating Factor |
±20 |
V |
| EAS |
Single Pulse Avalanche Energy |
65 |
mJ |
| IAR |
Avalanche Current |
16 |
A |
| EAR |
Repetitive Avalanche Energy |
6.8 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
| TJ,TSTG |
Junction and Storage Temperature Range |
-55 to +175 |
|
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
| |
Mounting torque, 6-32 or M3 srew |
10 lbf•in (1.1N•m) |
DescriptionFifth Generation HEXFETs from International Rectifier IRFZ34NPbF utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ34NPbF design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Parameters: | Technical/Catalog Information | IRFZ34NPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 29A |
| Rds On (Max) @ Id, Vgs | 40 mOhm @ 16A, 10V |
| Input Capacitance (Ciss) @ Vds | 700pF @ 25V |
| Power - Max | 68W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 34nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFZ34NPBF
IRFZ34NPBF
|
IRFZ34NPBF Data Sheet
