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IRFW840B

Features: • 8.0A, 500V, RDS(on) = 0.8Ω @VGS = 10 V• Low gate charge ( typical 41 nC)• Low Crss ( typical 35 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRFW840B / IRFI840B Unit VDSS ...

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SeekIC No. : 004377549 Detail

IRFW840B: Features: • 8.0A, 500V, RDS(on) = 0.8Ω @VGS = 10 V• Low gate charge ( typical 41 nC)• Low Crss ( typical 35 pF)• Fast switching• 100% avalanche tested• Impr...

IRFW840B Data Sheet

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Part Number:
IRFW840B
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 8.0A, 500V, RDS(on) = 0.8Ω @VGS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter IRFW840B / IRFI840B Unit

VDSS

Drain-Source Voltage

 500 V

ID

Drain Current    - Continuous (TC = 25°C)
                         - Continuous (TC = 100°C)

8.0

A

 5.1

 A

IDM

Drain Current    - Pulsed                                 (Note 1)

 32 A
VGSS Gate-Source Voltage ± 30 V

EAS

 Single Pulsed Avalanche Energy                     (Note 2) 320 mJ

IAR

 Avalanche Current                                          (Note 1)

8.0

A

EAR

Repetitive Avalanche Energy                          (Note 1)

13.4

mJ

 dv/dt

 Peak Diode Recovery dv/dt                            (Note 3)

 5.5

 V/ns

PD

Power Dissipation (TA = 25°C) *


3.13

W

 Power Dissipation (TC = 25°C)
                              - Derate above 25°C

134

 W

1.08

 W/

TJ, Tstg

Operating and Storage Temperature Range

-55 to +150

TL

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300




Description

These N-Channel enhancement mode power field effect transistors IRFW840B are produced using Fairchild's proprietary,planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices IRFW840B are well suited for high efficiency switch mode power supplies,power factor correction and electronic lamp ballasts based on half bridge.




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