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IRFWI530A

Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Improved Gate Charge· Extended Safe Operating Area· 175 Operating Temperature· Lower Leakage Current : 10 A (Max.) @ VDS = 100V· Lower RDS(ON) : 0.092 (Typ.)Specifications Symbol Characteristic V...

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SeekIC No. : 004377550 Detail

IRFWI530A: Features: · Avalanche Rugged Technology· Rugged Gate Oxide Technology· Lower Input Capacitance· Improved Gate Charge· Extended Safe Operating Area· 175 Operating Temperature· Lower Leakage Current :...

IRFWI530A Data Sheet

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Part Number:
IRFWI530A
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Avalanche Rugged Technology
· Rugged Gate Oxide Technology
· Lower Input Capacitance
· Improved Gate Charge
· Extended Safe Operating Area
· 175 Operating Temperature
· Lower Leakage Current : 10 A (Max.) @ VDS = 100V
· Lower RDS(ON) : 0.092 (Typ.)


Specifications

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 100 V
ID Continuous Drain Current (TC=25 ) 14 A
Continuous Drain Current (TC=100 ) 9.9
IDM Drain Current-Pulsed 56 A
VGS Gate-to-Source Voltage ±.0 V
EAS Single Pulsed Avalanche Energy 261 mJ
IAR Avalanche Current 14 A
EAR Repetitive Avalanche Energy 5.5 mJ
dv/dt Peak Diode Recovery dv/dt 6.5 V/ns
PD Total Power Dissipation (TA=25 ) 3.8 W
Total Power Dissipation (TC=25 )
Linear Derating Factor		 55
0.36		 W/°C
TJ , TSTG Operating Junction and
Storage Temperature Range		 - 55 to +175 °C
TL Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds		 300



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