IRFZ34NS

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 34nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 29A
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) @ Vds: 700pF @ 25V
Supplier Device Package: D2PAK
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Power - Max: 3.8W
Rds On (Max) @ Id, Vgs: 40 mOhm @ 16A, 10V


Features:

·Advanced Process Technology
·Surface Mount (IRFZ34NS)
·Low-profile through-hole (IRFZ34NL)
·175°C Operating Temperature
·Fast Switching
·Fully Avalanche Rated




Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current,VGS @ 10V	29	A
ID @ TC = 100°C	Continuous Drain Current,VGS @ 10V	20
IDM	Pulsed Drain Current	100
PD @TA = 25°C	Power Dissipation	3.8
PD @TC = 25°C	Power Dissipation	68	W
	Linear Derating Factor	0.45	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	130	mJ
IAR	Avalanche Current	16	A
EAR	Repetitive Avalanche Energy	5.6	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55to+175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

	Parameter	Typ.	Max.	Units
RJC	Junction-to-Case	-	2.2	°C/W
RJA	Junction-to-Ambient (PCB mount) **	-	40

Description

Fifth Generation HEXFETs from International Rectifier IRFZ34NS utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ34NS design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D²Pak IRFZ34NS is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRFZ34NS provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D²Pak IRFZ34NS is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRFZ34NS) is available for lowprofile applications.