IRFZ44N

Advanced HEXFET^® Power MOSFETs from International Rectifier IRFZ44N utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ44N design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

The IRFZ44N is designed as a advanced HEXFET power MOSFET from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

It has six features of IRFZ44N. (1)Advanced process technology. (2)Ultra low on-resistance. (3)Dynamic dv/dt rating. (4)175°C operating temperature. (5)Fast switching. (6)Fully avalanche rated. Those are all the main features.

Some absolute maximum ratings of IRFZ44N have been concluded into several points as follow. (1)Its continuous drain current Vgs at 10V would be 49A at Tc=25°C and would be 35A at 100°C. (2)Its pulsed drain current would be 160A. (3)Its power dissipation would be 94W. (4)Its linear derating factor would be 0.63W/°C. (5)Its gate to source voltage would be +/-20V. (6)Its avalanche current would be 25A. (7)Its repetitive avalanche energy would be 9.4mJ. (8)Its peak diode recovery dv/dt would be 5.0V/ns. (9)Its operating junction temperature and storage temperature range would be from -55°C to 175°C. (10)Its soldering temperature for 10 seconds would be 300°C (1.6mm from case). (11)Its mounting torque 6-32 or M3 srew would be 10lbf.in (1.1Nm). It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of IRFZ44N are concluded as follow. (1)Its drain to source breakdown voltage would be min 55V. (2)Its breakdown voltage temperature coefficient would be typ 0.058V/°C. (3)Its static drain to source on-resistance would be max 17.5mohms. (4)Its gate threshold voltage would be min 2.0V and max 4.0V. (5)Its forward transconductance would be min 19S. (6)Its drain to source leakage current would be 25uA and would be max 250uA at Tj=150°C. And so on. If you have any question or suggestion or want to know more information please contact us for IRFZ44N. Thank you!