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IRFZ24N

MOSFET N-CH 55V 17A TO-220AB

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SeekIC No. : 004377604 Detail

IRFZ24N: MOSFET N-CH 55V 17A TO-220AB

IRFZ24N Data Sheet

floor Price/Ceiling Price

US $ .67~.67 / Piece | Get Latest Price
Part Number:
IRFZ24N
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~400
  • Unit Price
  • $.67
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Description



Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12
IDM Pulsed Drain Current 68
PD @TC = 25°C Power Dissipation 45 W
  Linear Derating Factor 0.30 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalance Energy 71 mJ
IAR Avalance Current 10 A
EAR Repetitive Avalanche Energy 4.5 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
Tstg		 Operating Junction and
Storage Temperature Range		 -55 to +175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)  



Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier IRFZ24N utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ24N design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.




Parameters:

Technical/Catalog InformationIRFZ24N
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs70 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 370pF @ 25V
Power - Max45W
PackagingBulk
Gate Charge (Qg) @ Vgs20nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRFZ24N
IRFZ24N
IRFZ24NIR ND
IRFZ24NIRND
IRFZ24NIR



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