Features: ·Advanced Process Technology·Ultra Low On-Resistance·Dynamic dv/dt Rating·175°C Operating Temperature·Fast Switching·Fully Avalanche Rated·Optimized for SMPS ApplicationsSpecifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current,VGS @ 10V 30 A...
IRFZ34V: Features: ·Advanced Process Technology·Ultra Low On-Resistance·Dynamic dv/dt Rating·175°C Operating Temperature·Fast Switching·Fully Avalanche Rated·Optimized for SMPS ApplicationsSpecifications ...
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Parameter |
Max. |
Units | |
ID @ TC = 25°C |
Continuous Drain Current,VGS @ 10V |
30 |
A |
ID @ TC = 100°C |
Continuous Drain Current,VGS @ 10V |
21 | |
IDM |
Pulsed Drain Current |
120 | |
PD @TC = 25°C |
Power Dissipation |
70 |
W |
Linear Derating Factor |
0.46 |
W/°C | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
81 |
mJ |
IAR |
Avalanche Current |
30 |
A |
EAR |
Repetitive Avalanche Energy |
7.0 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
4.5 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55to+175 |
°C |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) | ||
Mounting torque, 6-32 or M3 srew |
10 lbf`in (1.1N`m) |
Parameter |
Typ. |
Max. |
Units | |
RJC | Junction-to-Case |
- |
2.15 |
°C/W |
RCS | Case-to-Sink, Flat, Greased Surface |
0.50 |
- | |
RJA | Junction-to-Ambient |
- |
62 |
Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ34V utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device IRFZ34V design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.