MOSFET N-CH 60V 17A TO-262
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Series: | HEXFET® | Manufacturer: | Vishay Siliconix | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Standard | Drain to Source Voltage (Vdss): | 60V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 17A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 10A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 4V @ 250µA | Gate Charge (Qg) @ Vgs: | 25nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 640pF @ 25V | ||
Power - Max: | 3.7W | Mounting Type: | Through Hole | ||
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA | Supplier Device Package: | TO-262-3 |
Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 17 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | 12 | |
IDM | Pulsed Drain Current | 68 | |
PD @TA = 25°C | Power Dissipation | 3.7 | W |
PD @TC = 25°C | Power Dissipation | 60 | W |
Linear Derating Factor | 0.40 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalance Energy | 100 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 4.5 | V/ns |
TJ Tstg |
Operating Junction and Storage Temperature Range |
-55 to +175 | °C |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
Third Generation HEXFETs from International Rectifier IRFZ24L utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ24L design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak IRFZ24L is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRFZ24L provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRFZ24L is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ24L) is available for lowprofile applications.