MOSFET N-Chan 60V 30 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 30 A | ||
Resistance Drain-Source RDS (on) : | 0.05 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Tube |
Parameter |
Max. |
Units | |
ID @ TC = 25°C |
Continuous Drain Current,VGS @ 10V |
30 |
A |
ID @ TC = 100°C |
Continuous Drain Current,VGS @ 10V |
21 | |
IDM |
Pulsed Drain Current |
120 | |
PD @TA = 25°C |
Power Dissipation |
3.7 |
W |
PD @TC = 25°C |
Power Dissipation |
88 |
W |
Linear Derating Factor |
0.59 |
W/°C | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
200 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
4.5 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55to+175 |
°C |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
Parameter |
Typ. |
Max. |
Units | |
RJC | Junction-to-Case |
- |
1.7 |
°C/W |
RJA | Junction-to-Ambient (PCB mounted,steady-state) ** |
- |
40 |
Third Generation HEXFETs from International Rectifier IRFZ34S utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ34S design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak IRFZ34S is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak IRFZ34S is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ34S) is available for lowprofile applications.