Features: · Low RDS(on)· Avalanche Energy Ratings· Dynamic dv/dt Rating· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light WeightSpecifications Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 10 A ID @ TC = 100°C Continuous...
IRFY11N50CMA: Features: · Low RDS(on)· Avalanche Energy Ratings· Dynamic dv/dt Rating· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light WeightSpecifications Parameter Uni...
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Parameter |
Units | ||
ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V |
10 |
A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
6.6 | |
IDM | Pulsed Drain Current |
40 | |
PD @TC = 25°C | Power Dissipation |
125 |
W
|
Linear Derating Factor |
1.0 |
W/°C | |
VGS | Gate-to-Source Voltage |
±20 |
V |
EAS | Single Pulse Avalanche Energy |
205 |
mJ |
IAR | Avalanche Current |
10 |
A |
EAR | Repetitive Avalanche Energy |
12.5 |
mJ |
dv/dt | Peak Diode Recovery dv/dt |
9.6 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55to+150 |
°C |
Lead Temperature |
300(0.063in./1.6mm from case for 10 sec) | ||
Weight |
4.3 (Typical) |
g |