IRFZ44EL

MOSFET N-CH 60V 48A TO-262

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IRFZ44EL Picture
SeekIC No. : 003432381 Detail

IRFZ44EL: MOSFET N-CH 60V 48A TO-262

floor Price/Ceiling Price

US $ .77~.77 / Piece | Get Latest Price
Part Number:
IRFZ44EL
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~300
  • Unit Price
  • $.77
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 60V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 48A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 23 mOhm @ 29A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 60nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1360pF @ 25V
Power - Max: 110W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 60nC @ 10V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Manufacturer: International Rectifier
Power - Max: 110W
Current - Continuous Drain (Id) @ 25° C: 48A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 29A, 10V
Input Capacitance (Ciss) @ Vds: 1360pF @ 25V
Supplier Device Package: TO-262


Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 48 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 34
IDM Pulsed Drain Current 192
PD @TC = 25°C Power Dissipation 110 W
  Linear Derating Factor 0.71 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 220 mJ
IAR Avalance Current 29 A
EAR Repetitive Avalanche Energy 11 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
Tstg
Operating Junction and
Storage Temperature Range
-55 to +175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)  



Description

Fifth Generation HEXFETs from International Rectifier IRFZ44EL utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ44EL design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRFZ44EL is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRFZ44EL provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ44EL) is available for low-profile applications.




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