IRFZ24

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Continuous Drain Current : 17 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.1 Ohms


Features:






Specifications






Description

The IRFZ24 has five features.The first one is dynamic dv/dt rating.The second one is 175 operating temperature.The third one is fast switching.The fourth one is ease of paralleling.The fifth one is simple drive requirements.

Third generation HEXFETs from international rectifier provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness.The TO-220 package of IRFZ24 is universally perferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

The IRFZ24 has some absolute maximum ratings.When parameter is continuous drain current,VGS @ 10V,the symbol is ID@TC=25,the Max. is 17,the units is A.When parameter is continuous drain current,VGS @ 10V,the symbol is ID@TC=100,the Max. is 12,the units is A.When parameter is pulsed drain current,the symbol is IDM,the Max. is 68,the units is A.When parameter is power dissipation,the symbol is PD@TC=25,the Max. is 60,the units is W.When parameter is junction and storage temperature range,the Max. is -55 to +175,the units is .When parameter is soldering temperature,for 10 seconds,the Max. is 300(1.6mm from case),the units is .