IRFZ44ES

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) @ Vgs: 60nC @ 10V
Supplier Device Package: D2PAK
Manufacturer: International Rectifier
Power - Max: 110W
Current - Continuous Drain (Id) @ 25° C: 48A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 29A, 10V
Input Capacitance (Ciss) @ Vds: 1360pF @ 25V


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	48	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	34
IDM	Pulsed Drain Current	192
PD @TC = 25°C	Power Dissipation	110	W
	Linear Derating Factor	0.71	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	220	mJ
IAR	Avalance Current	29	A
EAR	Repetitive Avalanche Energy	11	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ Tstg	Operating Junction and Storage Temperature Range	-55 to +175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

Description

Fifth Generation HEXFETs from International Rectifier IRFZ44ES utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ44ES design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D²Pak IRFZ44ES is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRFZ44ES provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D²Pak IRFZ44ES is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ44ES) is available for low-profile applications.