IRFZ34N

MOSFET MOSFET, 55V, 26A, 40 mOhm, 22.7 nC Qg, TO-220AB

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SeekIC No. : 00159378 Detail

IRFZ34N: MOSFET MOSFET, 55V, 26A, 40 mOhm, 22.7 nC Qg, TO-220AB

floor Price/Ceiling Price

Part Number:
IRFZ34N
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 29 A
Resistance Drain-Source RDS (on) : 40 mOhms Configuration : Single
Package / Case : TO-220AB    

Description

Maximum Operating Temperature :
Mounting Style :
Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 29 A
Resistance Drain-Source RDS (on) : 40 mOhms


Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 26 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 18
IDM Pulsed Drain Current 100
PD @TC = 25°C Power Dissipation 56 W
  Linear Derating Factor 0.37 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 110 mJ
IAR Avalance Current 16 A
EAR Repetitive Avalanche Energy 5.6 mJ
dv/dt Peak Diode Recovery dv/dt 4.6 V/ns
TJ
Tstg
Operating Junction and
Storage Temperature Range
-55 to +175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)  



Description

Fifth Generation HEXFETs from International Rectifier IRFZ34N utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ34N design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.




Parameters:

Technical/Catalog InformationIRFZ34N
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C29A
Rds On (Max) @ Id, Vgs40 mOhm @ 16A, 10V
Input Capacitance (Ciss) @ Vds 700pF @ 25V
Power - Max68W
PackagingBulk
Gate Charge (Qg) @ Vgs34nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRFZ34N
IRFZ34N



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