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IRFZ24V

Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 IDM Pulsed Drain Current 68 PD @TC = 25°C Power Dissipation 44 W Linear Derating Factor 0.29 W/°C VGS Gate-to...

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IRFZ24V: Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 IDM Pulsed Drain Current 6...

IRFZ24V Data Sheet

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Part Number:
IRFZ24V
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Description



Specifications

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12
IDM Pulsed Drain Current 68
PD @TC = 25°C Power Dissipation 44 W
  Linear Derating Factor 0.29 W/°C
VGS Gate-to-Source Voltage ±20 V
IAR Avalance Current 17 A
EAR Repetitive Avalanche Energy 4.4 mJ
dv/dt Peak Diode Recovery dv/dt 4.2 V/ns
TJ
Tstg		 Operating Junction and
Storage Temperature Range		 -55 to +175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)  



Description

Advanced HEXFET® Power MOSFETs from International Rectifier IRFZ24V utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ24V design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.




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