IRFZ24NPBF

MOSFET MOSFT 55V 17A 70mOhm 13.3nC

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SeekIC No. : 00146480 Detail

IRFZ24NPBF: MOSFET MOSFT 55V 17A 70mOhm 13.3nC

floor Price/Ceiling Price

US $ .43~1.07 / Piece | Get Latest Price
Part Number:
IRFZ24NPBF
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.07
  • $.65
  • $.45
  • $.43
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : 20 V Continuous Drain Current : 17 A
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 17 A


Specifications

Parameter Max. Units
VGS Gate-to-Source Voltage ±20 V
ID @ TC = 25

ID @ TC =100

IDM
Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V

Pulsed Drain Current
17

12

68
A


Linear Derating Factor 0.30 W/
EAS

IAR

EAR
Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy
71

10

4.5
mJ

A

mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ, TSTG
Junction and Storage Temperature Range -55 to +150
Soldering Temperature,for 10 seconds

300(1.6mm from case)

Mounting torque,6-32 or M3 screw 10 lbf`in(1.0N`m)



Description

Fifth Generation HEXFET® power MOSFETs from International Rectifier IRFZ24NPbF  utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRFZ24NPbF design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.




Parameters:

Technical/Catalog InformationIRFZ24NPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs70 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 370pF @ 25V
Power - Max45W
PackagingTube
Gate Charge (Qg) @ Vgs20nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFZ24NPBF
IRFZ24NPBF



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